Anibal Uriel Pacheco-Sanchez

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Universitat Autònoma de Barcelona (UAB)

Spain

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Recent Grants

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Postdoctoral Position

Open Date: 2022-04-01

Close Date:

Grant: Close

Writing Thesis Grant

Open Date: 2016-09-01

Close Date: 2016-12-01

Grant: Close

Abroad Graduate Studies

Open Date: 2012-10-01

Close Date: 2016-08-01

Articles (13)

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

Collaborators (9)

Henri HAPPY

Professor

Université Lille 1 - Sciences et Technologies

FRANCE

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Roman Sordan

Associate Professor

Politecnico di Milano

ITALY

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Ivan Puchades

Associate Professor

Rochester Institute of Technology

UNITED STATES

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Francisco G. Ruiz

Universidad de Granada

SPAIN

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Pedro Carlos Feijoo Guerro

Associate Professor

Universidad Politécnica de Madrid

SPAIN

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Deji Akinwande

Professor

University of Texas at Austin

UNITED STATES

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David Jiménez

Professor Agregat

University of Barcelona

SPAIN

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Andrés Godoy

Universidad de Granada

SPAIN

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Enrique G. Marin

SPAIN

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Anibal Uriel Pacheco-Sanchez

Research Interests

Explore related searches

Contact this professor

Recent Grants

Articles (13)

A Scalable Compact Model for the Static Drain Current of Graphene FETs

Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

Gate Tunable Lateral 2D Pn Junctions: An Analytical Study of Its Electrostatics

Physics-based bias-dependent compact modeling of 1/f noise in single- to few-layer 2D-FETs

Static and small-signal modeling of radiofrequency hexagonal boron nitride switches

Investigating the Device Performance Variation of a Buried Locally Gated Al/Al2O3 Graphene Field-Effect Transistor Process

A 5.2 GHz Inductorless CNTFET-Based Amplifier Design Feasible for On-Chip Implementation

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Collaborators (9)

Henri HAPPY

Roman Sordan

Ivan Puchades

Francisco G. Ruiz

Pedro Carlos Feijoo Guerro

Deji Akinwande

David Jiménez

Andrés Godoy

Enrique G. Marin

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