David Jiménez

Professor Agregat

University of Barcelona

Spain

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About

David Jiménez is a Professor Agregat at the Universitat Autònoma de Barcelona, Spain. His research primarily focuses on the characterization and modeling of graphene field-effect transistors (GFETs) and their applications in high-frequency analog electronics. Recent articles authored by him include works on voltage-dependent mobility in charge carriers, drain current variability, and compact modeling for integrated circuits utilizing graphene technology.

Articles (15)

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2025

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2021

Collaborators (9)

Henri HAPPY

Professor

Université Lille 1 - Sciences et Technologies

FRANCE

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Roman Sordan

Associate Professor

Politecnico di Milano

ITALY

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Ivan Puchades

Associate Professor

Rochester Institute of Technology

UNITED STATES

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Emiliano Pallecchi

Associate Professor

Université de Lille

FRANCE

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Francisco G. Ruiz

Universidad de Granada

SPAIN

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Pedro Carlos Feijoo Guerro

Associate Professor

Universidad Politécnica de Madrid

SPAIN

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Anibal Uriel Pacheco-Sanchez

Universitat Autònoma de Barcelona (UAB)

SPAIN

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Andrés Godoy

Universidad de Granada

SPAIN

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Enrique G. Marin

SPAIN

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David Jiménez

Research Interests

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About

Articles (15)

Characterization Methodology for Voltage-Dependent Mobility of Charge Carriers in Graphene FETs Using Single-Device Microwave Measurements

Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs

A Scalable Compact Model for the Static Drain Current of Graphene FETs

A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET

High-Data-Rate Modulators Based on Graphene Transistors: Device Circuit Co-Design Proposals

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

Gate Tunable Lateral 2D Pn Junctions: An Analytical Study of Its Electrostatics

Static and small-signal modeling of radiofrequency hexagonal boron nitride switches

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

An Extraction Method for Mobility Degradation and Contact Resistance of Graphene Transistors

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single-Layer Graphene FETs

The gate tunable 2D pn junction driven out-of-equilibrium

Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

Collaborators (9)

Henri HAPPY

Roman Sordan

Ivan Puchades

Emiliano Pallecchi

Francisco G. Ruiz

Pedro Carlos Feijoo Guerro

Anibal Uriel Pacheco-Sanchez

Andrés Godoy

Enrique G. Marin

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