Henri HAPPY

Professor

Université Lille 1 - Sciences et Technologies

France

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Henri HAPPY is a Professor at the University of Lille 1, Sciences and Technologies in France. His research areas include the analysis and modeling of graphene field-effect transistors, with a focus on their electrical characterization, performance, and applications in high-frequency communications and biosensing. Recent publications highlight his work on monolayer materials, bias-dependent noise modeling, and optoelectronic mixing techniques.

Articles (11)

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2024

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2023

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2022

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2021

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2021

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2021

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2021

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2020

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2020

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2020

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2020

Collaborators (7)

Domenico De Fazio

Associate Professor in Experimental Condensed Matter Physics

Ca' Foscari University of Venice

ITALY

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Johannes Bintinger

TU Wien

AUSTRIA

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Giancarlo Soavi

JuniorProfessor

Friedrich Schiller University Jena

GERMANY

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Emiliano Pallecchi

Associate Professor

Université de Lille

FRANCE

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Pedro Carlos Feijoo Guerro

Associate Professor

Universidad Politécnica de Madrid

SPAIN

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Anibal Uriel Pacheco-Sanchez

Universitat Autònoma de Barcelona (UAB)

SPAIN

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David Jiménez

Professor Agregat

University of Barcelona

SPAIN

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Henri HAPPY

Research Interests

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About

Articles (11)

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs

Monolayer molybdenum disulfide switches for 6G communication systems

Bias-Dependent Intrinsic RF Thermal Noise Modeling and Characterization of Single-Layer Graphene FETs

Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer

Author Correction: Optoelectronic mixing with high-frequency graphene transistors

Optoelectronic mixing with high-frequency graphene transistors

Experimental Observation and Modeling of the Impact of Traps on Static and Analog/HF Performance of Graphene Transistors

Reduced graphene oxide–based field effect transistors for the detection of E7 protein of human papillomavirus in saliva

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems

Collaborators (7)

Domenico De Fazio

Johannes Bintinger

Giancarlo Soavi

Emiliano Pallecchi

Pedro Carlos Feijoo Guerro

Anibal Uriel Pacheco-Sanchez

David Jiménez

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