Darrell Schlom

We present an integrated procedure for the synthesis of infinite-layer nickelates using molecular-beam epitaxy with gas-phase reduction by atomic hydrogen. We first discuss challenges in the growth and characterization of perovskite NdNiO3/SrTiO3, arising from post growth crack formation in stoichiometric films. We then detail a procedure for fully reducing NdNiO3 films to the infinite-layer phase, NdNiO2, using atomic hydrogen; the resulting films display excellent structural quality, smooth surfaces, and lower residual resistivities than films reduced by other methods. We utilize the in situ nature of this technique to investigate the role that SrTiO3 capping layers play in the reduction process, illustrating their importance in preventing the formation of secondary phases at the exposed nickelate surface. A comparative bulk- and surface-sensitive study indicates that the formation of a polycrystalline crust on the film surface serves to limit the reduction process.

Here, we report that a source of Si impurities commonly observed on (010) β-Ga2O3 is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga2O3 surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga2O3 growth.