Takeyoshi Onuma

Professor

Kogakuin University

Japan

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Takeyoshi Onuma is a Professor at Kogakuin University in Japan. His research focuses on the epitaxial growth of semiconductor materials, including β-Ga2O3 and α-In2O3 films, as well as bandgap engineering and luminescence properties of various oxide semiconductors. His recent publications highlight advancements in vapor phase epitaxy techniques and the characterization of optical properties in semiconductor alloys.

Articles (12)

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2025

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2025

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2021

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2021

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2021

Collaborators (9)

Shigefusa Chichibu

Tohoku University

JAPAN

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Yoshinao Kumagai

Professor

Tokyo University of Agriculture and Technology

JAPAN

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Kazunobu Kojima

Professor

Osaka University

JAPAN

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Yuichi Ota

Tokyo Metropolitan Industrial Technology Research Institute

JAPAN

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Shizuo Fujita

Kyoto University

JAPAN

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Kohei Shima

Associate professor

Tohoku University

JAPAN

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Akira Ohtomo

Institute of Science Tokyo

JAPAN

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Darrell Schlom

Professor

Cornell University

UNITED STATES

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Ken Goto

Tokyo University of Agriculture and Technology

JAPAN

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Takeyoshi Onuma

Research Interests

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About

Articles (12)

Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

Strain-induced band-gap widening in (100) β−Ga2O3 thin films grown on θ−Al2O3 buffer layers

Adsorption-controlled growth of homoepitaxial c-plane sapphire films

Bandgap engineering of spinel-structured oxide semiconductor alloys

Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition

Natural band alignment of MgO1−xSx alloys

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

Mist Chemical Vapor Deposition Growth of α‐In2O3 Films Using Indium Oxide Powder as Source Precursor

Vacuum Ultraviolet Emission Properties of Rocksalt‐Structured MgZnO Microcrystals Prepared on Quartz Glass Substrates

Identification of free and bound exciton emission of MgO single crystal in vacuum ultraviolet spectral range

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β -Ga2O3 substrate and homoepitaxial film

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga2O3 crystals detected by photocurrent measurement

Collaborators (9)

Shigefusa Chichibu

Yoshinao Kumagai

Kazunobu Kojima

Yuichi Ota

Shizuo Fujita

Kohei Shima

Akira Ohtomo

Darrell Schlom

Ken Goto

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