Erik Lind

A postdoctoral position is available in the field of microwave electronics, focusing on hybrid semiconductor-superconductor devices, at Lund University in Sweden. The position is announced by Professor Erik Lind, a leading researcher in nanoelectronics and co-founder at NordAmps. The research will involve advanced topics at the intersection of electrical engineering and condensed matter physics, with a particular emphasis on the development and study of hybrid devices that combine semiconductor and superconductor materials for novel electronic applications. The successful candidate will join a dynamic research environment at Lund University's Faculty of Engineering (Lunds tekniska högskola), working closely with Professor Lind and his team. The project is ideal for candidates with a strong background in microwave electronics, device physics, or related areas. The research group is engaged in cutting-edge work on nanoelectronics and device fabrication, offering opportunities for interdisciplinary collaboration and professional growth. Applicants should hold a PhD in electrical engineering, physics, or a closely related discipline, and should demonstrate experience or strong interest in microwave electronics and hybrid device technologies. The announcement does not specify funding details or application deadlines. Interested individuals are encouraged to contact Professor Erik Lind directly or refer to the LinkedIn post for further information and application procedures. Keywords: microwave electronics, hybrid semiconductor-superconductor devices, nanoelectronics, postdoc, Lund University.

PhD opening at Lund University in Electrical Engineering focusing on wide bandgap and ultra-wide-bandgap semiconductor devices , especially III-nitride HEMTs for RF and power electronics . The project is based in the Division of Electromagnetics and Nanoelectronics at the Department of Electrical and Information Technology, with close collaboration across researchers working on nitride-based devices, material growth, and characterization. The research topic includes fabrication and investigation of advanced transistors using AlGaN , AlScN , and AlN , along with device design, cleanroom fabrication, electrical characterization, and device modelling. This doctoral position is connected to major initiatives including projects funded by the Knut and Alice Wallenberg Foundation , C3NiT , and the Chips JU Wide-Bandgap Pilot Line . The environment is described as open and collaborative, with opportunities to work with doctoral students, senior researchers, and industrial partners. Eligibility highlights: a relevant second-cycle degree or equivalent, strong background in semiconductor physics/technology, very good English, and the ability to work independently and collaboratively. Helpful experience includes cleanroom work, GaN devices, RF or high-voltage measurements, and semiconductor fabrication/modeling. Funding/employment: this is a salaried doctoral student employment at full time. The standard doctoral duration is 4 years, with possible extension for teaching and departmental duties. Application window: apply in English by 31 July 2026 .