Rainer Timm

Associate Professor

Lund University

Sweden

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About

Rainer Timm is an Associate Professor at Lund University in Sweden. His research areas include the study of bismuth trimers and their effects on semiconductor surfaces, atomic layer deposition techniques for thin film solar cells, and the structural analysis of nanowires. His recent publications focus on topics such as ferroelectricity in ultrathin films, ion migration in perovskite devices, and the formation of 2D electron gas on nanosheet surfaces.

Articles (17)

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2025

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2022

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2022

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2022

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2022

Collaborators (20)

Anders Gustafsson

Professor

SWEDEN

Rainer Timm

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Articles (17)

X-ray analysis of nanowires and nanowire devices: structure, function and synthesis

In Situ Studies of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se2 for Thin Film Solar Cells

Bi trimers and self-limiting Bi-Sb interface formation upon Bi deposition on InSb(111)B surfaces

Localized trimers inducing metallic states in sub-monolayer thin Bi films on InSb(111)A

2D electron gas formation on InAs wurtzite nanosheet surfaces

Ion Migration and Redox Reactions in Axial Heterojunction Perovskite CsPb(Br1–xClx)3 Nanowire Devices Revealed by Operando Nanofocused X-ray Photoelectron Spectroscopy

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

Time evolution of surface species during the ALD of high-k oxide on InAs

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO2

Nanometric Moiré Stripes on the Surface of Bi2Se3 Topological Insulator

Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures

Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence

Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing

Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2 on Anatase TiO2(101)

Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si

Oxygen relocation during HfO2 ALD on InAs

Collaborators (20)

Anders Gustafsson

Anders Mikkelsen

Joachim Schnadt

Maurizio De Crescenzi

Martin Ek

Erik Lind

Jesper Wallentin

Lars-Erik Wernersson

Magnus T. Borgström

François Rochet

Jean-Jacques Gallet

Mattia Scagliotti

Arkady Yartsev

Chin Shen Ong

Reine Wallenberg

Giulio D'Acunto

Axel Persson

Charlotte Platzer Björkman

Lars Samuelson

Filip Lenrick

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