hironori okumura

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Assistant Professor

University of Tsukuba

Japan

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Hironori Okumura is an Assistant Professor at the University of Tsukuba, Japan. His research areas include radiation tolerance detectors, semiconductor materials, and interface traps in heterostructures. He has recently published articles on topics such as the development of high radiation tolerance detectors with CIGS and strain relaxation in Al-rich α-(AlGa)2O3 superlattices. His work contributes significantly to the fields of material science and semiconductor devices.

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JSPS

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NEDO

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Articles (18)

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2025

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University of Tsukuba

JAPAN

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hironori okumura

Research Interests

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Articles (18)

Development of high radiation tolerance detector with CIGS

Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification

Strain Relaxation of Al‐Rich α‐(AlGa)2O3 and α‐Al2O3/Ga2O3 Superlattice on m‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Fully vertical AlN-on-SiC Schottky barrier diodes

Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates

Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy

Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam

Degradation of vertical GaN diodes during proton and xenon-ion irradiation

Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy

Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates

Mg implantation in AlN layers on sapphire substrates

Electrical properties of vertical Cu2O/β-Ga2O3 (001) p–n diodes

Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection

Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3

Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Optical and electrical properties of silicon-implanted α-Al2O3

Collaborators (5)

Riena Jinno

Meiyong Liao

Muhammad Monirul Islam

Akira Uedono

Takeaki Sakurai

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