Akira Uedono

Professor

University of Tsukuba

Japan

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About

Akira Uedono is a Professor at the University of Tsukuba in Japan. His research areas include vacancy-type defects in semiconductor materials, particularly GaN and AlN, as well as the mechanistic interplay in wafer bonding for three-dimensional integration. He has contributed to the understanding of annealing behaviors and the role of defects in various materials through advanced techniques such as monoenergetic positron beams and photoluminescence measurements.

Articles (20)

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2022

Collaborators (13)

Koji Michishio

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Shigefusa Chichibu

Tohoku University

JAPAN

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Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Satoshi Fujii

National Institute for Materials Science

JAPAN

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Masahiro Horita

Associate Professor

Nagoya University

JAPAN

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Yosuke Harashima

Assistant Professor

Nara Institute of Science and Technology（NAIST）

JAPAN

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Makoto Miyoshi

Professor

Nagoya Institute of Technology

JAPAN

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Y. Shigeta

JAPAN

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Marcin Turek

Maria Curie-Skłodowska University

POLAND

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Michio Katouda

Guest Researcher (Guest Assistant Professor)

Waseda University

JAPAN

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Kohei Shima

Associate professor

Tohoku University

JAPAN

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hironori okumura

Assistant Professor

University of Tsukuba

JAPAN

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Takuya Hoshii

Assistant Professor

Tokyo Institute of Technology

JAPAN

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Akira Uedono

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About

Articles (20)

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

Characterization of Vacancy-Type Defects in Mg-and N-Implanted GaN by Using a Monoenergetic Positron Beam

Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration

Mechanistic Insights Into Microwave Annealing for Lattice Defect Recovery

Vacancy-Type Defects in HfO2 Layers and Their Role in Amorphous-to-Crystalline Transition Studied by Monoenergetic Positron Beams

Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams

Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE

Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations

Systematic search for stabilizing dopants in ZrO2 and HfO2 using first-principles calculations

Mg implantation in AlN layers on sapphire substrates

Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application

Origin of Voids at the SiO<sub>2</sub>/SiO<sub>2</sub> and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams

Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing

Collaborators (13)

Koji Michishio

Shigefusa Chichibu

Shoji Ishibashi

Satoshi Fujii

Masahiro Horita

Yosuke Harashima

Makoto Miyoshi

Y. Shigeta

Marcin Turek

Michio Katouda

Kohei Shima

hironori okumura

Takuya Hoshii

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