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Hiroyuki Kageshima

Shimane University

Research Interests

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Articles (23)

Collaborators (7)

Kenji Shiraishi

Tohoku University

Masahiro Hori

Shizuoka University

Toru Akiyama

Mie university

Tetsuo Hatakeyama

University of Toyama

Manjakavahoaka Razanoelina

Specially Appointed Assistant Professor

Kyoto University

Junji Yuhara

Nagoya University

Insung Seo

Assistant Professor

Shimane University

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Hiroyuki Kageshima

Research Interests

Make your next move.

Explore related searches

Articles (23)

Collaborators (7)

Kenji Shiraishi

Masahiro Hori

Toru Akiyama

Tetsuo Hatakeyama

Manjakavahoaka Razanoelina

Junji Yuhara

Insung Seo

Make your next move.

Hiroyuki Kageshima

Research Interests

Make your next move.

Explore related searches

Articles (23)

Computational analysis of 4H-SiC/SiO2 interfaces: atomic structure, electronic properties, and interfacial reaction kinetics

Corrigendum: “First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface” [Jpn. J. Appl. Phys. 65, 03SP18 (2026)]

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

First-principles study on network effects of medium on excess Si transport in Si oxide films

First-principles Study of Interstitial-Related Defects in Quartz

Low-energy electron microscopy investigation of germanene segregation on Ag(111) thin films

First-principles Study of Intrinsic hBN Island Nucleated During CVD Initial Growth on Cu(111)

Epitaxial Intercalation Growth of hBN/Graphene Bilayer Heterostructure on Commercial Copper Foil

First-principles study on barrier height of silicon emission from interface into oxide during silicon thermal oxidation

First-principles study on shape of intrinsic hBN island nucleated during CVD initial growth on Cu(111)

Twist angle dependence of graphene-stacked junction characteristics

Reaction of NO molecule at 4H-SiC/SiO2 interface and its orientation dependence: a first-principles study

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation

Resistive-switching behavior in stacked graphene diode

Carbonization-driven motion of Si islands on epitaxial graphene

Polarized Raman scattering spectroscopy of array of embedded graphene ribbons grown on 4H-SiC(0001)

Theoretical Study on Origin of CVD Growth Direction Difference in Graphene/hBN Heterostructures

Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces

Appearance of Ferromagnetism in Pt(100) Ultrathin Films Originated from Quantum-well States

Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO<sub>2</sub> interfaces

Correlation between structures and vibration properties of germanene grown by Ge segregation

<i>Ab initio</i>-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

Collaborators (7)

Kenji Shiraishi

Masahiro Hori

Toru Akiyama

Tetsuo Hatakeyama

Manjakavahoaka Razanoelina

Junji Yuhara

Insung Seo

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