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Kenji Shiraishi

Professor

Tohoku University

Japan

Research Interests

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Professors in Japan Professors in Condensed Matter Physics Condensed Matter Physics professors in Japan

Articles (15)

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2026

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2026

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2026

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2026

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2026

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2026

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2025

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2025

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2025

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2025

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2025

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2025

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2025

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2022

Collaborators (9)

Kenta Chokawa

Nagoya University

JAPAN

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Toru Akiyama

Mie university

JAPAN

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Hiroyuki Kageshima

Professor

Shimane University

JAPAN

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Tetsuo Hatakeyama

Professor

University of Toyama

JAPAN

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Kaori Seino

Associate Professor

Kyushu Institute of Technology

JAPAN

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Masashi Kurosawa

Nagoya University

JAPAN

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Osamu Nakatsuka

Professor

Nagoya University

JAPAN

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Mauro Boero

Professor (full)

Nagoya University

JAPAN

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Insung Seo

Assistant Professor

Shimane University

JAPAN

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Kenji Shiraishi

Research Interests

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Articles (15)

Computational analysis of 4H-SiC/SiO2 interfaces: atomic structure, electronic properties, and interfacial reaction kinetics

Corrigendum: “First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface” [Jpn. J. Appl. Phys. 65, 03SP18 (2026)]

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

Theoretical analysis of 4H-SiC/SiO2 interface structures and band alignments: effects of NO annealing

Diffusion mechanisms via vacancies of a magnesium acceptor in gallium nitride

Origin of shallow hole traps at GaN/SiO2 interface studied from density functional theory

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN

First-principles Study of Interstitial-Related Defects in Quartz

Space-induced floating electronic states in non-stoichiometric amorphous silicon nitride for memory devices applications

Silicon-Richness Impact for Enhanced Charge-Trapping in 3D NAND Flash Memories

Atomic and electronic structures of point defects related to vacancy-mediated mechanism of Mg diffusion in GaN

Structure of the very first atomic layer of Ga oxide on GaN at GaN oxidation front

Boron as a passivating dopant of oxygen-vacancy-induced hole traps at GaN/SiO2 interface

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

Collaborators (9)

Kenta Chokawa

Toru Akiyama

Hiroyuki Kageshima

Tetsuo Hatakeyama

Kaori Seino

Masashi Kurosawa

Osamu Nakatsuka

Mauro Boero

Insung Seo

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