Ronald Schrimpf

Professor

Vanderbilt University

United States

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Professor Ronald Schrimpf is a faculty member at Vanderbilt University in the United States. His research focuses on the effects of radiation on semiconductor materials and devices, particularly in the context of wide-bandgap semiconductors and extreme environment electronics. Recent articles by Professor Schrimpf explore topics such as carrier recovery in β-Ga2O3, threshold voltage hysteresis in AlGaN/GaN HEMTs, and defect dynamics in high electric fields.

Articles (20)

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2025

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2023

Collaborators (7)

Stefano Bonaldo

University of Padova

ITALY

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Hongping Zhao

Professor

Ohio State University

UNITED STATES

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Robert Reed

Vanderbilt University

UNITED STATES

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Alessandro Paccagnella

professor

University of Padua

ITALY

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Gabor Karsai

Professor

Vanderbilt University

UNITED STATES

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Andrew O'Hara

Assistant Professor

Western Michigan University

UNITED STATES

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Sokrates Pantelides

McMinn Professor Physics, Professor of Elecrical Engineerng, University Distinguished Professor of Physics and Engineering

Vanderbilt University

UNITED STATES

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Ronald Schrimpf

Research Interests

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About

Articles (20)

Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3

Errata to “Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits”

Effectiveness of NIEL as a Predictor of Single-Event Displacement Damage Effects in CMOS Circuits

(Ultra)wide-bandgap semiconductors for extreme environment electronics

Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage

Threshold Voltage Hysteresis and Gate Leakage in AlGaN/GaN HEMTs

Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors

Erratum: “Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation” [J. Appl. Phys. 133, 015703 (2023)]

Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide

Incorporating Component-Level Testing Into Bayesian Degradation Distributions to Estimate a Voltage Regulator’s Radiation Failure Probabilities

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

In Situ Measurement of 1.8-MeV Proton Radiation Effects on Comb-Drive MEMS Resonators

Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices

Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager With Alpha Particle Irradiation

Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators

Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation

Damage Separation in Proton-Irradiated Bipolar Junction Transistors as a Function of Energy

Collaborators (7)

Stefano Bonaldo

Hongping Zhao

Robert Reed

Alessandro Paccagnella

Gabor Karsai

Andrew O'Hara

Sokrates Pantelides

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