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Ignacio Iñiguez de la Torre

Universidad de Salamanca

Spain

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Research Interests

Hardware Engineering

40%

Materials Chemistry

10%

Transistor Technology

50%

Semiconductor Physics

50%

Solid-state Electronics

50%

High-frequency Electronics

40%

Memristor Technology

30%

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Articles19

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

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Year:

2025

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature

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Year:

2025

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

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Year:

2025

Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices

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Year:

2024

On the Asymmetry of Resistive Switching Transitions

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Year:

2024

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

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Year:

2024

On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes

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Year:

2024

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

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Year:

2024

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

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Year:

2024

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

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Year:

2023

Low temperature memory effects in AlGaN/GaN nanochannels

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Year:

2023

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

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Year:

2023

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

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Year:

2023

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–$V$ Curve and S-Parameters

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Year:

2023

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

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Year:

2023

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

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Year:

2023

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

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Year:

2022

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

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Year:

2022

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Article Link

Year:

2022

Collaborators8

Eduardo Perez

Institute of Microelectronics

GERMANY

Guillermo Vinuesa

Associate Professor

Universidad de Valladolid Escuela de Ingenierías Industriales

SPAIN

Yvon Cordier

FRANCE

Javier Mateos

Full Professor

Universidad de Salamanca

SPAIN

Salvador Dueñas Carazo

PROFESSOR

Universidad de Valladolid

SPAIN

Tomas Gonzalez

Full Professor

Universidad de Salamanca

SPAIN

Héctor Sánchez Martín

Universidad de Salamanca

SPAIN

Mahmoud ABOU DAHER

Université de Lille

FRANCE

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