Ignacio Iñiguez de la Torre

Universidad de Salamanca

Spain

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Articles (19)

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2025

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2022

Collaborators (8)

Eduardo Perez

Institute of Microelectronics

GERMANY

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Guillermo Vinuesa

Associate Professor

Universidad de Valladolid Escuela de Ingenierías Industriales

SPAIN

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Yvon Cordier

FRANCE

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Javier Mateos

Full Professor

Universidad de Salamanca

SPAIN

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Salvador Dueñas Carazo

PROFESSOR

Universidad de Valladolid

SPAIN

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Tomas Gonzalez

Full Professor

Universidad de Salamanca

SPAIN

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Héctor Sánchez Martín

Universidad de Salamanca

SPAIN

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Mahmoud ABOU DAHER

Université de Lille

FRANCE

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Ignacio Iñiguez de la Torre

Research Interests

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Articles (19)

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices

On the Asymmetry of Resistive Switching Transitions

Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Low temperature memory effects in AlGaN/GaN nanochannels

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–$V$ Curve and S-Parameters

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

Collaborators (8)

Eduardo Perez

Guillermo Vinuesa

Yvon Cordier

Javier Mateos

Salvador Dueñas Carazo

Tomas Gonzalez

Héctor Sánchez Martín

Mahmoud ABOU DAHER

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