Tomas Gonzalez

Full Professor

Universidad de Salamanca

Spain

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Tomas Gonzalez is a Full Professor at the University of Salamanca, Spain. His research focuses on electrothermal modeling and the performance of GaN-based devices, with recent articles exploring topics such as Monte Carlo simulations, low-energy electron irradiation effects, and the dynamics of resistive switching transitions. His work contributes to advancements in high-frequency microwave detection and the understanding of GaN high electron mobility transistors.

Articles (19)

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2025

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Collaborators (8)

Ignacio Iñiguez de la Torre

Universidad de Salamanca

SPAIN

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Eduardo Perez

Institute of Microelectronics

GERMANY

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Guillermo Vinuesa

Associate Professor

Universidad de Valladolid Escuela de Ingenierías Industriales

SPAIN

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Yvon Cordier

FRANCE

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Javier Mateos

Full Professor

Universidad de Salamanca

SPAIN

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Salvador Dueñas Carazo

PROFESSOR

Universidad de Valladolid

SPAIN

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Héctor Sánchez Martín

Universidad de Salamanca

SPAIN

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R. Rengel

SPAIN

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Tomas Gonzalez

Research Interests

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About

Articles (19)

Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight

Photoresponse of asymmetric planar GaN-based nanodiodes at low temperature

Monte Carlo Analysis of DC–AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices

On the Asymmetry of Resistive Switching Transitions

On the Effect of Low-Energy Electron Irradiation in the RF Responsivity of GaN Nanodiodes

Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

Low temperature memory effects in AlGaN/GaN nanochannels

Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range

Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the $I$–$V$ Curve and S-Parameters

A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Collaborators (8)

Ignacio Iñiguez de la Torre

Eduardo Perez

Guillermo Vinuesa

Yvon Cordier

Javier Mateos

Salvador Dueñas Carazo

Héctor Sánchez Martín

R. Rengel

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