James Speck

Professor

University of California

United States

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James Speck is a Professor at the University of California, USA. His research focuses on semiconductor materials and device physics, specifically in the areas of InGaN LEDs, GaN-based micro-LEDs, and the effects of material defects on carrier transport. Recent publications include studies on the influence of V-defects in red InGaN MQW LEDs and the removal of Si impurities in GaN regrowth. He also investigates growth techniques for AlN and β-Ga₂O₃, alongside the analysis of leakage currents in III-nitride micro-light-emitting diodes.

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Collaborators (12)

Chris G. Van de Walle

UNITED STATES

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Robert Reed

Vanderbilt University

UNITED STATES

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Sajal Islam

Missouri State University

UNITED STATES

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Sriram Krishnamoorthy

Assistant Professor

University of California, Santa Barbara

UNITED STATES

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Yifan Yao

University of California, Santa Barbara

UNITED STATES

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Tanay Tak

Undergraduate Teaching Assistant

Georgia Institute of Technology

UNITED STATES

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Sai Mu

Assistant Professor

University of South Carolina

UNITED STATES

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Saulius Marcinkevicius

KTH Royal Institute of Technology

SWEDEN

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Weisong Wang

Associate Professor

Wright State University

UNITED STATES

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Shuji Nakamura

Professor

University of California

UNITED STATES

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Sokrates Pantelides

McMinn Professor Physics, Professor of Elecrical Engineerng, University Distinguished Professor of Physics and Engineering

Vanderbilt University

UNITED STATES

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Rinat Yapparov

KTH Royal Institute of Technology

SWEDEN

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James Speck

Research Interests

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About

Articles (30)

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Removal of Si impurities from GaN regrowth interfaces using XeF2

Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes

Growth regimes of (0001) AlN by ammonia molecular beam epitaxy

Growth of nitrogen-doped (010) β-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Heated-H3PO4 etching of (001) β-Ga2O3

Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124, 172102 (2024)]

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics

Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes

Effect of Mg doping on carrier recombination in GaN

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Atomic layer etching (ALE) of III-nitrides

First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga2O3

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

N2O grown high Al composition nitrogen doped β-(AlGa)2O3/β-Ga2O3 using MOCVD

Controllable nitrogen doping of MOCVD Ga2O3 using NH3

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Collaborators (12)

Chris G. Van de Walle

Robert Reed

Sajal Islam

Sriram Krishnamoorthy

Yifan Yao

Tanay Tak

Sai Mu

Saulius Marcinkevicius

Weisong Wang

Shuji Nakamura

Sokrates Pantelides

Rinat Yapparov

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