Tanay Tak

Undergraduate Teaching Assistant

Georgia Institute of Technology

United States

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Tanay Tak is an Undergraduate Teaching Assistant at the Georgia Institute of Technology, USA. His research focuses on the efficiency and performance of GaN-based optoelectronic devices, particularly in the areas of quantum wells, micro-LEDs, and light-emitting diodes. Recent articles highlight his work on threading dislocations, carrier injection mechanisms, and the analysis of leakage currents in III-nitride systems.

Articles (18)

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Collaborators (4)

James Speck

Professor

University of California

UNITED STATES

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Saulius Marcinkevicius

KTH Royal Institute of Technology

SWEDEN

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Shuji Nakamura

Professor

University of California

UNITED STATES

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Rinat Yapparov

KTH Royal Institute of Technology

SWEDEN

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Tanay Tak

Research Interests

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About

Articles (18)

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124, 172102 (2024)]

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Investigation of the cesium activation of GaN photocathodes by low-energy electron microscopy

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation

Volumetric carrier injection in InGaN quantum well light emitting diodes

Collaborators (4)

James Speck

Saulius Marcinkevicius

Shuji Nakamura

Rinat Yapparov

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