Shuji Nakamura

Professor

University of California

United States

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Articles (19)

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2024

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Collaborators (7)

steven Denbaars

Professor

University of California, Santa Barbara

UNITED STATES

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James Speck

Professor

University of California

UNITED STATES

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Stacia Keller

University of California, Santa Barbara

UNITED STATES

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Yifan Yao

University of California, Santa Barbara

UNITED STATES

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Tanay Tak

Undergraduate Teaching Assistant

Georgia Institute of Technology

UNITED STATES

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Saulius Marcinkevicius

KTH Royal Institute of Technology

SWEDEN

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Rinat Yapparov

KTH Royal Institute of Technology

SWEDEN

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Shuji Nakamura

Research Interests

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Articles (19)

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124, 172102 (2024)]

Dynamics of carrier injection through V-defects in long wavelength GaN LEDs

Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Effect of Mg doping on carrier recombination in GaN

Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes

Atomic layer etching (ALE) of III-nitrides

Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments

Structure of V-defects in long wavelength GaN-based light emitting diodes

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Collaborators (7)

steven Denbaars

James Speck

Stacia Keller

Yifan Yao

Tanay Tak

Saulius Marcinkevicius

Rinat Yapparov

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