Jawad Ul Hassan

Assoc Professor

Linköping University

Sweden

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About

Jawad Ul Hassan is an Associate Professor at Linköpings universitet, Sweden. His research focuses on the optimization of growth conditions for high-quality 4H-SiC epitaxial layers, the properties of defects in silicon carbide devices, and the influence of chemical vapor deposition on material characteristics. Recent publications include studies on V2 defect centers, spin dynamics for quantum photonics, and the impact of hydrocarbons on the semiconductor quality.

Articles (20)

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2025

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2022

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2022

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2022

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2022

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2020

Collaborators (18)

Niklas Rorsman

Research Professor at Chalmers University of Technology

Chalmers University of Technology

SWEDEN

Jawad Ul Hassan

Research Interests

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About

Articles (20)

Influence of different hydrocarbons on impurities and minority carrier lifetime in 4H-SiC epitaxial layers

The critical role of hydrocarbon source and growth optimization for high-quality thick 4H-SiC epitaxial layers

Single V2 defect in 4H silicon carbide Schottky diode at low temperature

Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna

Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers

Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers

Characterization of single shallow silicon-vacancy centers in 4H−SiC

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Observations of very fast electron traps at SiC/high-κ dielectric interfaces

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide

Broadband single-mode planar waveguides in monolithic 4H-SiC

Five-second coherence of a single spin with single-shot readout in silicon carbide

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Collaborators (18)

Niklas Rorsman

Viktor Ivády

Caspar H. van der Wal

Jelena Vučković

Benedikt Tissot

Daniel Haasmann

Sima Dimitrijev

Cristian Bonato

David D. Awschalom

Naoya Morioka

Christopher Anderson

Son Nguyen

Vladislav Bushmakin

Pasquale Cilibrizzi

Einar Ö. Sveinbjörnsson

Axel Persson

Takeshi Ohshima

Lasse Vines

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