Niklas Rorsman
Has grant
Research Professor at Chalmers University of Technology
Research Interests
Explore related searches
Contact this professor
Get a free first email built on one of their papers, ready for you to edit and send yourself.
About
Dr. Niklas Rorsman is a Research Professor at Chalmers University of Technology in Sweden. His research focuses on GaN-HEMTs, including the characterization of trapping effects, barrier lowering, and the impact of material profiles on two-dimensional electron gas properties. He has recently published articles exploring cryogenic effects, high-electron-mobility layers, and noise characterization in GaN-HEMT systems.
Recent Grants
Grant: Close
Center for III-Nitride Technologies
Open Date: 2017-12-01
Close Date: 2022-12-01
Grant: Close
HPM-skydd av AESA baserat på GaN
Open Date: 2014-09-01
Close Date: 2017-03-01
Grant: Close
Indium Nitride-Based Electronics for Millimeterwave and Terahertz Communication and Sensing Applications
Open Date: 2014-01-01
Close Date: 2018-12-01
Grant: Close
Swedish Manga
Open Date: 2011-01-01
Close Date: 2013-12-01
Grant: Close
Advanced III-Nitrides-based electronics for future microwave communication and sensing systems
Open Date: 2010-01-01
Close Date: 2017-12-01
Positions (1)
Niklas Rorsman
Chalmers University of Technology
5 months ago
This fully funded PhD position at Chalmers University of Technology focuses on advanced characterization and modelling of GaN-based electronics for high frequency applications. The research is conducted within the Microwave Electronics Laboratory (MEL) at the Department of Microtechnology and Nanoscience, a world-class facility specializing in high speed electronic devices, circuits, and systems for communication and sensing applications ranging from 1 GHz to 500 GHz. The laboratory is equipped with state-of-the-art millimeter wave measurement tools and a cleanroom facility, supporting cutting-edge research in semiconductor materials and devices. The project centers on III-nitride semiconductor devices, particularly high electron mobility transistors (HEMTs), targeting applications in wireless communication and radar systems. The research aims to push the boundaries of device performance by exploring new concepts in material processing, epitaxial design, and device fabrication. Key activities include defining and designing non-linear measurements, characterizing large-signal and trapping effects, and developing methodologies for extracting small- and large-signal models. The work is highly collaborative, involving both academic and industry partners, and offers opportunities to participate in the realization of complete wireless system demonstrators. As a doctoral student, you will take advanced courses within the Graduate School of Microtechnology and Nanoscience, develop your own scientific concepts, and communicate research results both verbally and in writing. The position includes teaching or other departmental duties up to 20% of working hours, potentially extending the appointment to five years. You will join a dynamic team of PhD students and senior researchers, contributing to semiconductor technology development, characterization, modelling, and circuit design. Applicants must hold a MSc degree in physics or electrical engineering (or equivalent), generally not older than two years, and demonstrate strong English communication skills. Enthusiasm, independence, creativity, and a problem-solving mindset are essential, along with excellent cooperation and social abilities. Experience in microwave measurements and semiconductor device characterization is advantageous. Physical presence is required throughout the study period, and a valid residence permit must be presented by the start date. The position offers a starting salary of 34,550 SEK per month (valid from May 25, 2025), full employee benefits, and access to Sweden’s generous social support systems. Chalmers is committed to gender equality and diversity, providing a supportive environment for all employees. Swedish language courses are available for non-native speakers. The application deadline is May 20, 2026. Applications must be submitted in English via the online application form, including CV, personal letter, motivation, thesis, and transcripts. Incomplete or emailed applications will not be considered. References will be requested after the interview. For further information, contact Research Professor Niklas Rorsman at [email protected].
5 months ago
Articles (15)
Year:
2025
Year:
2024
Year:
2024
Year:
2024
Year:
2023
Year:
2023
Year:
2023
Year:
2023
Year:
2023
Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect transistors. It has been hypothesized that the NI traps are defects located inside the SiO2 dielectric with energy levels close to the SiC conduction band edge and the observed conductance spectroscopy signal is a result of electron tunneling to and from these defects. Using aluminum nitride and aluminum oxide as gate dielectrics instead of SiO2, we detect NI traps at these SiC/dielectric interfaces as well. A detailed investigation of the NI trap density and behavior as a function of temperature is presented and discussed. Advanced scanning transmission electron microscopy in combination with electron energy loss spectroscopy reveals no SiO2 at the interfaces. This strongly suggests that the NI traps are related to the surface region of the SiC rather than being a property of the gate dielectric.
Year:
2023
Year:
2022
Year:
2022
Year:
2022
Year:
2021
Year:
2020
Collaborators (13)
Jawad Ul Hassan
Assoc Professor
Linköping University
Vincent Desmaris
Chalmers University of Technology
Plamen Paskov
Linköping University
Andrei Vorobiev
Chalmers University of Technology
Per Persson
Professor
Linköping University
Victor Belitsky
Chalmers University of Technology
Daniel Haasmann
Lecturer
Griffith University
Sima Dimitrijev
Professor
Griffith University
Vanya Darakchieva
-
Nerijus Armakavicius
Assistant Professor
Linköping University
Einar Ö. Sveinbjörnsson
-
Anelia Kakanakova-Georgieva
Faculty / Associate Professor
Linköping University
Axel Persson
Lund University
Make your next move.
Prepare your application
Review drafts before you send them.