Johannes Aberl

PhD position in the "Group-IV nano and heterostructures" group of Assoz. Univ.-Prof. Moritz Brehm

Johannes Kepler University Linz

Austria

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Johannes Aberl is a PhD candidate in the "Group-IV nano and heterostructures" group under Assoz. Univ.-Prof. Moritz Brehm at Johannes Kepler University Linz, Austria. His research focuses on electronic transport in transistors, nanoconfined light-emitting diodes, and the development of advanced Si/Ge-based devices. Recent publications include studies on reconfigurable Ge transistors, electrostatic gating in field-effect transistors, and the growth of Ge epitaxy.

Articles (20)

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2025

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2022

Collaborators (7)

Masiar Sistani

TU Wien

AUSTRIA

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Adam Gali

professor

Budapest University of Technology and Economics

HUNGARY

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Raphael Behrle

TU Wien

AUSTRIA

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Daniele Nazzari

TU Wien

AUSTRIA

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Moritz Brehm

Prof. at Johannes Kepler University Linz

Johannes Kepler University Linz

AUSTRIA

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Heiko Groiss

Johannes Kepler University Linz

AUSTRIA

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Walter M. Weber

Professor for Nanoelectronics

TU Wien

AUSTRIA

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Johannes Aberl

Research Interests

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Articles (20)

Telecom Light-Emitting Diodes Based on Nanoconfined Self-Assembled Silicon-Based Color Centers

Si/Ge1−xSnx/Si transistors with highly transparent Al contacts

Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Telecom Light-Emitting Diodes Based on Nanoconfined Self-Assembled Silicon-Based Color Centers

Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors

Light emission from ion-implanted SiGe quantum dots grown on Si substrates

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States

Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

In situ TEM heating experiments on thin epitaxial GeSn layers: Modes of phase separation

Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator

Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts

Epitaxial Growth of Planar Hutwires on Silicon‐on‐Insulator Substrates

Relaxation Delay of Ge‐Rich Epitaxial SiGe Films on Si(001)

Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments

Collaborators (7)

Masiar Sistani

Adam Gali

Raphael Behrle

Daniele Nazzari

Moritz Brehm

Heiko Groiss

Walter M. Weber

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