Walter M. Weber

Professor for Nanoelectronics

TU Wien

Austria

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Walter M. Weber is a Professor for Nanoelectronics at TU Wien, Austria. His research focuses on advanced topics in nanoelectronics, including 2D transistors, electrostatic gating in Ge-based reconfigurable field-effect transistors, and Schottky-barrier transistors. Recent publications highlight his work on the fabrication and performance of novel semiconductor devices, addressing challenges in electronic transport and materials for next-generation applications.

Articles (20)

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2021

Collaborators (8)

Masiar Sistani

TU Wien

AUSTRIA

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Johannes Aberl

PhD position in the "Group-IV nano and heterostructures" group of Assoz. Univ.-Prof. Moritz Brehm

Johannes Kepler University Linz

AUSTRIA

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Alois Lugstein

AUSTRIA

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Raphael Behrle

TU Wien

AUSTRIA

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Daniele Nazzari

TU Wien

AUSTRIA

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Martien Ilse den Hertog

Université Grenoble Alpes

FRANCE

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Ghader Darbandy

GERMANY

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Benjamin Iñiguez

Full Professor

Universitat Rovira i Virgili

SPAIN

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Walter M. Weber

Research Interests

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About

Articles (20)

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

Si/Ge1−xSnx/Si transistors with highly transparent Al contacts

Nonvolatile Reconfigurable Transistor via Ferroelectrically Induced Current Modulation

Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors

Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures

Experimental approach for laser direct imaging of negative tone polyimide resists in semiconductor industry

Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arrays

Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures

A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors

Epitaxial Growth of Crystalline CaF2 on Silicene

Multisite Dopamine Sensing With Femtomolar Resolution Using a CMOS Enabled Aptasensor Chip

A Germanium Nanowire Reconfigurable Transistor Model for Predictive Technology Evaluation

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

Collaborators (8)

Masiar Sistani

Johannes Aberl

Alois Lugstein

Raphael Behrle

Daniele Nazzari

Martien Ilse den Hertog

Ghader Darbandy

Benjamin Iñiguez

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