Kai Fu

University of Utah

United States

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Articles (10)

Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

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Year:

2023

Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting

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Year:

2023

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

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Year:

2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

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Year:

2022

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

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Year:

2022

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN<sub>x</sub>/SiON as Composite Gate Dielectric

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Year:

2022

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

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Year:

2022

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

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Year:

2021

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

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Year:

2021

Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

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Year:

2021

Collaborators (3)

Shisong Luo

Rice University

UNITED STATES

Robert J. Nemanich

Professor

Arizona State University

UNITED STATES

Yuji Zhao

UNITED STATES

Kai Fu

Research Interests

Explore related searches

Contact this professor

Articles (10)

Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN<sub>x</sub>/SiON as Composite Gate Dielectric

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

Collaborators (3)

Shisong Luo

Robert J. Nemanich

Yuji Zhao

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