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Ziyi He

Arizona State University

United States

Research Interests

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Professors in United States Professors in Condensed Matter Physics Condensed Matter Physics professors in United States

Articles (15)

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2025

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2025

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2025

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2024

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2024

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2023

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2023

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2023

Collaborators (10)

Shisong Luo

Rice University

UNITED STATES

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Dragica Vasileska

Professor

Arizona State University

UNITED STATES

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Robert J. Nemanich

Professor

Arizona State University

UNITED STATES

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Yuji Zhao

Rice University

UNITED STATES

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Robert Vajtai

Research Professor

Rice University

UNITED STATES

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Abhijit Biswas

Rice University

UNITED STATES

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Bin Gao

Professor

Zhengzhou University

CHINA

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Hanyu Zhu

Associate Professor

Rice University

UNITED STATES

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Kai Fu

University of Utah

UNITED STATES

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Houqiang Fu

Arizona State University

UNITED STATES

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Ziyi He

Research Interests

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Articles (15)

Electrical and Reliability Study of GaN E-Mode MISHEMTs With Two-Step Etching Gate Recess

Mitigation of self-heating in AlGaN/GaN HEMTs using transferred LPCVD-grown h-BN

Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination

The second-order nonlinear optical properties of κ-phase gallium oxide

Material and electrical characterization of ultrawide bandgap BN/AlN metal-insulator-semiconductor (MIS) Schottky diodes

High-Temperature Electrical Characteristics of High-Voltage AlN Schottky Barrier Diodes on Single-Crystal AlN Substrates

Ultrawide Bandgap AlN Trench Metal-Oxide-Semiconductor Transistors (MOSFETs) on Single-Crystal AlN Substrates

Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress

Modulation of dielectric properties of hexagonal/cubic boron nitride composites

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling

Vertical <i>β</i>-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

Anisotropic electrical properties of NiO x /β-Ga2O3 p-n heterojunctions on (2 ̅01), (001), and (010) crystal orientations

GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications

Collaborators (10)

Shisong Luo

Dragica Vasileska

Robert J. Nemanich

Yuji Zhao

Robert Vajtai

Abhijit Biswas

Bin Gao

Hanyu Zhu

Kai Fu

Houqiang Fu

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