Masashi Kurosawa

Nagoya University

Japan

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Articles (20)

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2025

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2022

Collaborators (9)

Yasuyoshi Kurokawa

Associate Professor

Nagoya University

JAPAN

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Kazuhiro Gotoh

Associate Professor

Niigata University

JAPAN

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Takuya Sasaki

Assistant Professor

Nagoya University

JAPAN

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Satoru Miyamoto

Designated Associate Professor

Nagoya University

JAPAN

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Tianzhuo Zhan

Toyo University

JAPAN

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Takanobu Watanabe

Professor

Waseda University

JAPAN

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Tatsuro Maeda

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Masahiro Nomura

Professor

University of Tokyo

JAPAN

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Osamu Nakatsuka

Professor

Nagoya University

JAPAN

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Masashi Kurosawa

Research Interests

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Articles (20)

Room-Temperature Operation of Ge1–xSnx/Ge1–x–ySixSny Resonant Tunneling Diodes Featured with H2 Introduction during Molecular Beam Epitaxy

Surface Passivation Technique for Ge1–xSnx-Based Diodes by GeO2 Atomic Layer Deposition with Postoxidation Annealing

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure

Epitaxial Growth of Germanium Ultrathin Films on Ag(100) Thin Films on Ge(100) Substrates Prepared by Atomic Segregation Epitaxy

(Invited) Recent Progress on Heteroepitaxy of Si-Sn Alloy Thin Films

Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer

Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Evaluation of Band Structure of Single Crystalline Si-Rich SiSn thin Film

Preparation and thermoelectric characterization of boron-doped Si nanocrystals/silicon oxide multilayers

Superior power generation capacity of GeSn over Si demonstrated in cavity-free thermoelectric device architecture

Effect of nanostructuring on thermoelectric performance of SiGe thin films

Self-organized Ge1−x Sn x quantum dots formed on insulators and their room temperature photoluminescence

Lattice-matched growth of high-Sn-content (x∼0.1) Si1−x Sn x layers on Si1−y Ge y buffers using molecular beam epitaxy

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−y Si x Sn y epitaxial layers grown on GaAs(001)

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments

Investigation of Band Structure in Strained Single Crystalline Si1-X Sn X

Investigation of Band Structure in Strained Single Crystalline Si1-X Sn X

Collaborators (9)

Yasuyoshi Kurokawa

Kazuhiro Gotoh

Takuya Sasaki

Satoru Miyamoto

Tianzhuo Zhan

Takanobu Watanabe

Tatsuro Maeda

Masahiro Nomura

Osamu Nakatsuka

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