Tatsuro Maeda

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Articles (16)

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2025

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2025

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2025

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2025

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2024

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2024

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2023

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2022

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2022

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2021

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2021

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2021

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2021

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2020

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2020

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2020

Collaborators (6)

Hiroyuki Ota

Chief Senior Researcher

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Toshifumi Irisawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Yukinori Morita

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Takashi Koida

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Masashi Kurosawa

Nagoya University

JAPAN

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Osamu Nakatsuka

Professor

Nagoya University

JAPAN

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Tatsuro Maeda

Research Interests

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Articles (16)

Excess Oxygen Modulation Through Channel Thickness Scaling and Annealing Ambient for AlOx-Passivated Ultrathin InOx FETs

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique

High Schottky Barrier Height of Cerium-Doped Hydrogenated Indium Oxide/p-Type Ge Diodes

Mobility and stability improvements through in-situ AlOx passivation on extremely thin 2 nm-thick InOx back-gate FETs

Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films

(Invited) Germanium Layer Transfer for Advanced CMOS

High-Responsivity Ge Schottky Photodetectors With Short-Wave Infrared Transparent Conductive Oxide Electrodes

Schottky barrier contact on In0.53Ga0.47As with short-wave infrared transparent conductive oxide

Transparent Conductive Oxide (TCO) Gated Ingaas Mosfets for Front-Side Illuminated Short-Wave Infrared Detection

High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate

(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform

(Invited) Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform

Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si

(Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication

(Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication

InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology

Collaborators (6)

Hiroyuki Ota

Toshifumi Irisawa

Yukinori Morita

Takashi Koida

Masashi Kurosawa

Osamu Nakatsuka

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