Osamu Nakatsuka

Professor

Nagoya University

Japan

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Osamu Nakatsuka is a Professor at Nagoya University, Japan. His research areas encompass the development of advanced semiconductor materials and devices, particularly focusing on Ge1-xSnx and Si0.5Sn0.5 alloys. He has contributed to significant studies on resonant tunneling diodes, surface passivation techniques, and the epitaxial growth of tin-rich layers, as evidenced by his recent publications.

Articles (20)

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2025

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2022

Collaborators (5)

Takuya Sasaki

Assistant Professor

Nagoya University

JAPAN

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Tianzhuo Zhan

Toyo University

JAPAN

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Takanobu Watanabe

Professor

Waseda University

JAPAN

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Tatsuro Maeda

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Masashi Kurosawa

Nagoya University

JAPAN

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Osamu Nakatsuka

Research Interests

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About

Articles (20)

Room-Temperature Operation of Ge1–xSnx/Ge1–x–ySixSny Resonant Tunneling Diodes Featured with H2 Introduction during Molecular Beam Epitaxy

Surface Passivation Technique for Ge1–xSnx-Based Diodes by GeO2 Atomic Layer Deposition with Postoxidation Annealing

First-principles investigation of phase transition from zincblende to L10 at high temperature in Si0.5Sn0.5 alloys

Ge0.75Sn0.25 on insulator metal-semiconductor-metal photodetector by layer transfer technique

Emergence of Negative Differential Resistance Through Hole Resonant Tunneling in GeSn/GeSiSn Double Barrier Structure

(Invited) Recent Progress on Heteroepitaxy of Si-Sn Alloy Thin Films

Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer

Epitaxial growth of Ge1−xSnx thin film with Sn composition of 50% and possibility of Ge–Sn ordered bonding structure formation

Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer

Tensile-strained Ge1−x Sn x layers on Si(001) substrate by solid-phase epitaxy featuring seed layer introduction

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method

Self-organized Ge1−x Sn x quantum dots formed on insulators and their room temperature photoluminescence

Lattice-matched growth of high-Sn-content (x∼0.1) Si1−x Sn x layers on Si1−y Ge y buffers using molecular beam epitaxy

Crystalline and optoelectronic properties of Ge1−x Sn x /high-Si-content-Si y Ge1−x−y Sn x double-quantum wells grown with low-temperature molecular beam epitaxy

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1−x−y Si x Sn y epitaxial layers grown on GaAs(001)

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

Collaborators (5)

Takuya Sasaki

Tianzhuo Zhan

Takanobu Watanabe

Tatsuro Maeda

Masashi Kurosawa

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