Nerijus Armakavicius

Assistant Professor

Linköping University

Sweden

Research Interests

Explore related searches

Professors in Sweden

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Nerijus Armakavicius is an Assistant Professor at Linköping University in Sweden. His research focuses on the electronic properties of semiconductors, particularly group-III nitrides and their associated device structures, as well as advanced sensing technologies. Recent contributions include investigations into gas flow sensing using photovoltaics and the characteristics of two-dimensional electron gases in AlGaN/GaN heterostructures.

Articles (10)

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2022

Year:

2021

Year:

2021

Collaborators (11)

Mathias Schubert

University of Nebraska - Lincoln

UNITED STATES

View details

Plamen Paskov

Linköping University

SWEDEN

View details

Niklas Rorsman

Research Professor at Chalmers University of Technology

Chalmers University of Technology

SWEDEN

View details

Per Persson

Professor

Linköping University

SWEDEN

View details

I. G. Ivanov

SWEDEN

View details

Jens Eriksson

Associate Professor

Linköping University

SWEDEN

View details

Vanya Darakchieva

SWEDEN

View details

CHAMSEDDINE BOUHAFS

Instituto de Engenharia de Sistemas e Computadores Tecnologia e Ciência

PORTUGAL

View details

Megan Stokey

Assistant Professor

Milwaukee School of Engineering

UNITED STATES

View details

UFUK KILIC

Research Assistant Professor

University of Nebraska - Lincoln

UNITED STATES

View details

Axel Persson

Lund University

SWEDEN

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Nerijus Armakavicius

Research Interests

Explore related searches

Contact this professor

About

Articles (10)

Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Self-powered, multi-angle gas flow sensing based on photovoltaics with porous graphite electrodes

Feasibility of Melting NbC Using Electron Beam Powder Bed Fusion

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect

Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

Collaborators (11)

Mathias Schubert

Plamen Paskov

Niklas Rorsman

Per Persson

I. G. Ivanov

Jens Eriksson

Vanya Darakchieva

CHAMSEDDINE BOUHAFS

Megan Stokey

UFUK KILIC

Axel Persson

Make your next move.