Plamen Paskov

Linköping University

Sweden

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Articles (14)

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2021

Collaborators (9)

Mathias Schubert

University of Nebraska - Lincoln

UNITED STATES

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Niklas Rorsman

Research Professor at Chalmers University of Technology

Chalmers University of Technology

SWEDEN

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Motoaki Iwaya

JAPAN

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Per Persson

Professor

Linköping University

SWEDEN

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Vanya Darakchieva

SWEDEN

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Patrik Straňák

Fraunhofer Institute for Applied Solid State Physics

GERMANY

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Nerijus Armakavicius

Assistant Professor

Linköping University

SWEDEN

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Axel Persson

Lund University

SWEDEN

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Lasse Vines

Assoc. Prof.

University of Oslo

NORWAY

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Plamen Paskov

Research Interests

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Articles (14)

High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD

Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

On the thermal conductivity anisotropy in wurtzite GaN

Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures

High-quality N-polar GaN optimization by multi-step temperature growth process

Thermal conductivity of AlxGa1−xN (0≤x≤1) epitaxial layers

Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect

On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC

Erratum: “Phonon-boundary scattering and thermal transport in AlxGa1− xN: Effect of layer thickness” [Appl. Phys. Lett. 117, 252102 (2020)]

Collaborators (9)

Mathias Schubert

Niklas Rorsman

Motoaki Iwaya

Per Persson

Vanya Darakchieva

Patrik Straňák

Nerijus Armakavicius

Axel Persson

Lasse Vines

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