Paul Fons

Professor

Keio University

Japan

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Paul Fons is a Professor at Keio University in Japan. His research focuses on nonlinear photonics, electronic properties of materials, and advanced photocatalytic systems. Recent publications include studies on diamond nonlinear photonic sensors, Schottky interfaces, and transition-metal dichalcogenides. He is also engaged in exploring the dynamics of phase-change materials and their applications in semiconductor technologies.

Articles (19)

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2025

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2021

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2021

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2021

Collaborators (11)

Atsushi Ando

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Ryo Ishikawa

Assistant Professor

Saitama Daigaku

JAPAN

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Shunsuke Mori

Assistant Professor

The Univeristy of Tokyo

JAPAN

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Toshifumi Irisawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Milos Krbal

University of Pardubice

CZECH REPUBLIC

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Yuta Saito

Professor

Tohoku University

JAPAN

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Muneaki Hase

Professor

University of Tsukuba

JAPAN

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Shogo Hatayama

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuji Sutou

JAPAN

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Fumihiko Uesugi

National Institute for Materials Science

JAPAN

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Jessica Afalla

Assistant Professor

University of Tsukuba

JAPAN

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Paul Fons

Research Interests

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About

Articles (19)

Unveiling the Significant Role of Schottky Interfaces for Threshold Voltage in Ovonic Threshold Switching

An ultrafast diamond nonlinear photonic sensor

CVD Grown Sub 10 nm Size g-C3N4 Particle-Decorated TiO2 Nanotube Array Composites for Enhanced Photocatalytic H2 Production

Coherent optical response driven by non-equilibrium electron–phonon dynamics in a layered transition-metal dichalcogenide

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Nonvolatile Isomorphic Valence Transition in SmTe Films

Cooperative dynamic polaronic picture of diamond color centers

Spin-dependent bandgap renormalization and state-filling effect in Bi2Se3 observed by ultrafast Kerr rotation

Origins of midgap states in Te-based Ovonic threshold switch materials

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Formation of 2D-Structured InSe Ceramics from Amorphous Phase Deposited on a Kapton Foil

Electronic intraband scattering in a transition-metal dichalcogenide observed by double-excitation ultrafast electron diffraction

Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

Photo‐Induced Tellurium Segregation in MoTe2

The formation of a one-dimensional van der Waals selenium crystal from the three-dimensional amorphous phase: A spectroscopic signature of van der Waals bonding

Understanding the low resistivity of the amorphous phase of Cr2Ge2Te6 phase-change material: Experimental evidence for the key role of Cr clusters

Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials

Dielectric relaxation in amorphous and crystalline Sb2Te3 thin films

Chalcogenide Materials Engineering for Phase‐Change Memory and Future Electronics Applications: From Sb–Te to Bi–Te

Collaborators (11)

Atsushi Ando

Ryo Ishikawa

Shunsuke Mori

Toshifumi Irisawa

Milos Krbal

Yuta Saito

Muneaki Hase

Shogo Hatayama

Yuji Sutou

Fumihiko Uesugi

Jessica Afalla

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