Toshifumi Irisawa

National Institute of Advanced Industrial Science and Technology

Japan

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Articles (14)

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2025

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2025

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2024

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2024

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2023

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2021

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2021

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2021

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2020

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2020

Collaborators (13)

Paul Fons

Professor

Keio University

JAPAN

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Hiroyuki Ota

Chief Senior Researcher

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuta Saito

Professor

Tohoku University

JAPAN

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Kazuhiko Endo

Professor

Tohoku University

JAPAN

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Yukinori Morita

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuki Okigawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Shogo Hatayama

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Shota Nunomura

National Institute of Advanced Industrial Science and Technology

JAPAN

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Toshitaka Kubo

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Mitsuhiro Okada

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuji Sutou

JAPAN

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Fumihiko Uesugi

National Institute for Materials Science

JAPAN

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Tatsuro Maeda

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Toshifumi Irisawa

Research Interests

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Articles (14)

Realization of ideal Ohmic contact to n-Ge: The key roles of Ge-Bi-Te for quasi-van der Waals interface formation

Excess Oxygen Modulation Through Channel Thickness Scaling and Annealing Ambient for AlOx-Passivated Ultrathin InOx FETs

Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

Layered NbS2 contacts formed via H2S reaction with Nb for high-performance WSe2-channel p-type transistors

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Defect generation and recovery in high-k HfO2/SiO2/Si stack fabrication

Characterization of band alignment at a metal–MoS2 interface by Kelvin probe force microscopy

Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control

Micrometer-scale WS2 atomic layers grown by alkali metal free gas-source chemical vapor deposition with H2S and WF6 precursors

ALD-ZrO<inf>2</inf> gate dielectric with suppressed interfacial oxidation for high performance MoS<inf>2</inf> top gate MOSFETs

Air-stable and efficient electron doping of monolayer MoS<inf>2</inf>by salt-crown ether treatment

Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers

CVD grown bilayer WSe<inf>2</inf>/MoSe<inf>2</inf> heterostructures for high performance tunnel transistors

Performance and reliability improvement in Ge(1 0 0) nMOSFETs through channel flattening process

Collaborators (13)

Paul Fons

Hiroyuki Ota

Yuta Saito

Kazuhiko Endo

Yukinori Morita

Yuki Okigawa

Shogo Hatayama

Shota Nunomura

Toshitaka Kubo

Mitsuhiro Okada

Yuji Sutou

Fumihiko Uesugi

Tatsuro Maeda

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