Shogo Hatayama

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Articles (16)

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2024

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2024

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2024

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2021

Collaborators (6)

Paul Fons

Professor

Keio University

JAPAN

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Shunsuke Mori

Assistant Professor

The Univeristy of Tokyo

JAPAN

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Toshifumi Irisawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Yuta Saito

Professor

Tohoku University

JAPAN

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Yuji Sutou

JAPAN

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Fumihiko Uesugi

National Institute for Materials Science

JAPAN

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Shogo Hatayama

Research Interests

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Articles (16)

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Interfacial reaction behavior between ferromagnetic CoFeB and the topological insulator Sb2Te3

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding

Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions

Nonvolatile Isomorphic Valence Transition in SmTe Films

Origins of midgap states in Te-based Ovonic threshold switch materials

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device

Electrical Conduction Mechanism of β‐MnTe Thin Film with Wurtzite‐Type Structure Using Radiofrequency Magnetron Sputtering

Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase

Understanding the low resistivity of the amorphous phase of Cr2Ge2Te6 phase-change material: Experimental evidence for the key role of Cr clusters

Thermal stability and polymorphic transformation kinetics in β-MnTe films deposited via radiofrequency magnetron sputtering

High Contact Resistivity Enabling Low‐Energy Operation in Cr2Ge2Te6‐Based Phase‐Change Random Access Memory

Collaborators (6)

Paul Fons

Shunsuke Mori

Toshifumi Irisawa

Yuta Saito

Yuji Sutou

Fumihiko Uesugi

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