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Takahiro Nagata

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National Institute for Materials Science

Japan

Research Interests

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Professors in Japan Professors in Condensed Matter Physics Condensed Matter Physics professors in Japan

Recent Grants

Grant: Close

Development of fluoride based high-k dielectric thin film materials for MIS structure

Open Date: 2020-04-01

Close Date: 2023-03-31

Grant: Close

強誘電体表面誘起電荷と焦電性を融合したπ電子伝導制御型自立駆動電子素子の創出

Open Date: 2016-04-01

Close Date: 2019-03-31

Grant: Close

フッ化物ユニバーサル高誘電体極薄膜材料の創出

Open Date: 2014-04-01

Close Date: 2017-03-31

Grant: Close

Fundamental study of polarity and screening charge effects of ferroelectric materials on pi conjugated materials for autonomous operational sensor application

Open Date: 2014-04-01

Close Date: 2016-03-31

Grant: Close

Interface structure and hydrogen detection of Schottky contact to polar-ZnO single crystal

Open Date: 2007-01-01

Close Date: 2008-12-31

Articles (20)

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Collaborators (13)

Antonella Parisini

Professor

University of Parma

ITALY

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michiko yoshitake

National Institute for Materials Science

JAPAN

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Tomoe Yayama

Assistant Professor

Kogakuin University

JAPAN

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Yoshiyuki YAMASHITA

Professor

Kyushu University

JAPAN

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Hidekazu Ikeno

Associate Professor

Osaka University

JAPAN

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Isao Ohkubo

Principal Researcher

National Institute for Materials Science

JAPAN

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Takatsugu Wakahara

National Institute for Materials Science

JAPAN

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Piero Mazzolini

Researcher

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

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Tomohiro Matsushita

Professor

Nara Institute of Science and Technology（NAIST）

JAPAN

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Huu Duc Luong

Specially Appointed Assistant Professor

Institute of Science Tokyo

JAPAN

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MD Shahriar HOSSAIN

Associate Professor

University of Queensland

AUSTRALIA

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Satoshi Ishii

Accosiate Porfessor

University of Tsukuba

JAPAN

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Yuh Hijikata

Designated Associate Professor

Nagoya University

JAPAN

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Takahiro Nagata

Research Interests

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Recent Grants

Articles (20)

Effectiveness of fluorine termination at nitrogen vacancies inside gallium nitride crystals based on first-principles calculations

Development of thermally stable N-doped multielement dielectrics and their boost in electrical and UV-sensing performances of resulting dual-gate thin film transistors

MOCVD‐Grown MoS <sub>2</sub> Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Epitaxial growth and crystal structure transitions of Nb-doped (Ga <sub> <i>x</i> </sub> In <sub> 1− <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> thin films on SrTiO <sub>3</sub> (111) substrates

Effects of interface formation process on tunneling current components of n-type Ti <sub>0.3</sub> Zn <sub>0.7</sub> O <sub>1.3</sub> /p-type Si stack structure

Sputtered N-doped (Al,Zr,Ti,Ta,Hf)Ox dielectric layers for high-performance thin-film transistor-based UV photodetectors

A Method for LLM-Based Construction of a Materials Property Knowledge Graph: A Case Study

Overcoming surface energy to control Cu3N epitaxial growth

Automated analysis of photoelectron yield spectroscopy spectra interpreted via power laws

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

Electrical and UV-sensing performance of N-doped-Ba(Ti,Zr,Mo,Hf,Ta)O3-dielectric and ZnSnO-channel-based flexible thin-film transistors

Giant piezoresponse in nanoporous (Ba,Ca)(Ti,Zr)O3 thin film

NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

Crystal Structure Modification and Dielectric Properties of Sr- and La-Containing A<sub>2</sub>B<sub>2</sub>O<sub>7</sub> Thin Films for High-Temperature Operational Film Capacitors

Direct Analysis of Stacked Au/Ti/In<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/p<sup>+</sup>‑Si Transport Mechanisms Using Operando Hard X‑ray Photoelectron Spectroscopy

Unusual Selective Monitoring of N,N-Dimethylformamide in a Two-Dimensional Material Field-Effect Transistor

Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1−xO2 thin films

High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba(Ti,Zr,Ta,Hf,Mo)O3 film-based metal-oxide-semiconductor-related devices

The non-innocent role of cobalt in manipulating the magnetic and electric properties of mesoporous silica thin films

Analysis of Iodide Transport on Methyl Ammonium Lead Iodide Perovskite Solar Cell Structure Through Operando Hard X-ray Photoelectron Spectroscopy

Collaborators (13)

Antonella Parisini

michiko yoshitake

Tomoe Yayama

Yoshiyuki YAMASHITA

Hidekazu Ikeno

Isao Ohkubo

Takatsugu Wakahara

Piero Mazzolini

Tomohiro Matsushita

Huu Duc Luong

MD Shahriar HOSSAIN

Satoshi Ishii

Yuh Hijikata

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