Takuji Hosoi

Associate Professor

Kwansei Gakuin University

Japan

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Articles (10)

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

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2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Collaborators (5)

Takuma Kobayashi

Osaka University

JAPAN

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Mitsuo Okamoto

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Iwao Kawayama

Associate Professor

Kyoto University

JAPAN

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Heiji Watanabe

Osaka University

JAPAN

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Mitsuru Sometani

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Takuji Hosoi

Research Interests

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Articles (10)

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices

Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000 1 ¯) substrates

Fixed-charge generation in SiO<sub>2</sub>/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation

Collaborators (5)

Takuma Kobayashi

Mitsuo Okamoto

Iwao Kawayama

Heiji Watanabe

Mitsuru Sometani

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