Takuma Kobayashi

Osaka University

Japan

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Articles (26)

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2025

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Collaborators (4)

Mitsuo Okamoto

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Heiji Watanabe

Osaka University

JAPAN

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Mitsuru Sometani

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Takuji Hosoi

Associate Professor

Kwansei Gakuin University

JAPAN

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Takuma Kobayashi

Research Interests

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Articles (26)

Comprehensive research on nitrided SiO<sub>2</sub>/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes

Design of annealing conditions for the formation of isolated single-photon emitters at SiO<sub>2</sub>/SiC interfaces

Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO<sub>2</sub>/GaN Interface

Formation of high-quality SiO<sub>2</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>(001) MOS structures: The role of post-deposition annealing

GaO<sub><i>x</i></sub> interlayer-originated hole traps in SiO<sub>2</sub>/<i>p</i>-GaN MOS structures and their suppression by low-temperature gate dielectric deposition

Insight into the energy level structure and luminescence process of color centers at SiO<sub>2</sub>/SiC interfaces

Characterization of nitrided SiC(1 <(1)over bar> 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy

Generation of single photon emitters at a SiO<sub>2</sub>/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Impacts of post-deposition annealing on hole trap generation at SiO<sub>2</sub>/p-type GaN MOS interfaces

Oxygen-related defects in 4H-SiC from first principles

Separate evaluation of interface and oxide hole traps in SiO<sub>2</sub>/GaN MOS structures with below- and above-gap light excitation

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Impact of post-deposition annealing on SiO<sub>2</sub>/SiC interfaces formed by plasma nitridation of the SiC surface and SiO<sub>2</sub> deposition

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2

Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing

Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Impact of Sn incorporation on sputter epitaxy of GeSn

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000 1 ¯) substrates

Fixed-charge generation in SiO<sub>2</sub>/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Collaborators (4)

Mitsuo Okamoto

Heiji Watanabe

Mitsuru Sometani

Takuji Hosoi

Make your next move.

Takuma Kobayashi

Research Interests

Explore related searches

Contact this professor

Articles (26)

Comprehensive research on nitrided SiO<sub>2</sub>/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes

Design of annealing conditions for the formation of isolated single-photon emitters at SiO<sub>2</sub>/SiC interfaces

Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO<sub>2</sub>/GaN Interface

Formation of high-quality SiO<sub>2</sub>/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>(001) MOS structures: The role of post-deposition annealing

GaO<sub><i>x</i></sub> interlayer-originated hole traps in SiO<sub>2</sub>/<i>p</i>-GaN MOS structures and their suppression by low-temperature gate dielectric deposition

Insight into the energy level structure and luminescence process of color centers at SiO<sub>2</sub>/SiC interfaces

Characterization of nitrided SiC(1 &lt;(1)over bar&gt; 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy

Generation of single photon emitters at a SiO<sub>2</sub>/SiC interface by high-temperature oxidation and reoxidation at lower temperatures

Impacts of post-deposition annealing on hole trap generation at SiO<sub>2</sub>/p-type GaN MOS interfaces

Oxygen-related defects in 4H-SiC from first principles

Separate evaluation of interface and oxide hole traps in SiO<sub>2</sub>/GaN MOS structures with below- and above-gap light excitation

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Impact of post-deposition annealing on SiO<sub>2</sub>/SiC interfaces formed by plasma nitridation of the SiC surface and SiO<sub>2</sub> deposition

Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2

Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing

Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

Impact of Sn incorporation on sputter epitaxy of GeSn

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Electrical properties and energy band alignment of SiO<sub>2</sub>/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000 1 ¯) substrates

Fixed-charge generation in SiO<sub>2</sub>/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Collaborators (4)

Mitsuo Okamoto

Heiji Watanabe

Mitsuru Sometani

Takuji Hosoi

Make your next move.

Characterization of nitrided SiC(1 <(1)over bar> 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy