Mitsuo Okamoto

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Articles (9)

Year:

2024

Year:

2024

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2020

Collaborators (6)

Takuma Kobayashi

Osaka University

JAPAN

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Dai Okamoto

Associate Professor

University of Toyama

JAPAN

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Tetsuo Hatakeyama

Professor

University of Toyama

JAPAN

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Heiji Watanabe

Osaka University

JAPAN

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Mitsuru Sometani

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Takuji Hosoi

Associate Professor

Kwansei Gakuin University

JAPAN

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Mitsuo Okamoto

Research Interests

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Articles (9)

3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls

Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs

Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation

Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces

Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs

Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices

Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs

Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering

Collaborators (6)

Takuma Kobayashi

Dai Okamoto

Tetsuo Hatakeyama

Heiji Watanabe

Mitsuru Sometani

Takuji Hosoi

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