Tetsuya Tohei

Associate Professor

Osaka University

Japan

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Tetsuya Tohei is an Associate Professor at Osaka University in Japan. His research primarily focuses on nanobeam X-ray diffraction techniques, as evidenced by his recent work on strain analysis in AlGaN/GaN high-electron-mobility transistors and crystallographically distinct growth sectors in Na-flux GaN. Additionally, he explores advanced materials characterization methods, including image registration and X-ray diffuse scattering in silicon.

Articles (18)

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2025

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2024

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2022

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2021

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2021

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2021

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2020

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2020

Collaborators (7)

Shigeru Kimura

Japan Synchrotron Radiation Research Institute

JAPAN

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Kanako Shojiki

講師 / Senior Lecturer/ Junior Associate Professor

Kyoto University

JAPAN

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Yasuhiko Imai

Visiting Associate Professor

Osaka University

JAPAN

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YongJin Cho

Cornell University

UNITED STATES

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Huili Xing

Professor

Cornell University

UNITED STATES

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Jan M. Tomczak

Senior Lecturer

King’s College London

UNITED KINGDOM

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Hideto Miyake

Professor

Mie university

JAPAN

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Tetsuya Tohei

Research Interests

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About

Articles (18)

Revealing crystallographically distinct growth sectors in Na-flux GaN via machine learning-assisted nanobeam x-ray diffraction analysis

In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition

Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN

Anchor point based image registration for absolute scale topographic structure detection in microscopy

Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam

Enhancing memristor multilevel resistance state with linearity potentiation via the feedforward pulse scheme

Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction

Local strain distribution analysis in strained SiGe spintronics devices

Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

Versatile Functionality of Four-Terminal TiO2–x Memristive Devices as Artificial Synapses for Neuromorphic Computing

Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

Breaking of Thermopower–Conductivity Trade-Off in LaTiO<sub>3</sub> Film around Mott Insulator to Metal Transition

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- And a-plane sapphire under high-temperature annealing

Fabrication of GaO <sub>x</sub> based crossbar array memristive devices and their resistive switching properties

Local piezoelectric properties in Na-flux GaN bulk single crystals

Collaborators (7)

Shigeru Kimura

Kanako Shojiki

Yasuhiko Imai

YongJin Cho

Huili Xing

Jan M. Tomczak

Hideto Miyake

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