Yoshihiro IROKAWA

National Institute for Materials Science

Japan

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Articles (10)

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2022

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2021

Year:

2021

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2021

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2020

Year:

2020

Collaborators (2)

Shigefusa Chichibu

Tohoku University

JAPAN

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Kohei Shima

Associate professor

Tohoku University

JAPAN

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Yoshihiro IROKAWA

Research Interests

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Articles (10)

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO<sub>2</sub> Process

Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen

Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs

Comparison of Hydrogen-Induced Oxide Charges Among GaN Metal-Oxide-Semiconductor Capacitors with Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, or Hf<sub>0.57</sub>Si<sub>0.43</sub>O<sub>x</sub> Gate Dielectrics

Ambient-hydrogen-induced changes in the characteristics of Pt/gan schottky diodes fabricated on bulk gan substrates

Influence of HfO<sub>2</sub> and SiO<sub>2</sub> interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Interface characteristics of β-Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/Pt capacitors after postmetallization annealing

Effect of hydrogen on Pt/GaN Schottky diodes

Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

Collaborators (2)

Shigefusa Chichibu

Kohei Shima

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