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Shigefusa Chichibu

Tohoku University

Japan

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Research Interests

Condensed Matter Physics

20%

Materials Chemistry

40%

Semiconductor Physics

40%

Heteroepitaxy

20%

Silicon Photonics

20%

Phase Diagram

20%

Computational Materials

10%

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Articles13

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

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Year:

2025

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Article Link

Year:

2024

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Article Link

Year:

2024

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

Article Link

Year:

2024

Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation

Article Link

Year:

2024

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

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Year:

2023

Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy

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Year:

2023

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

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Year:

2023

Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE

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Year:

2023

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions

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Year:

2023

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

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Year:

2022

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth—A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

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Year:

2021

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Article Link

Year:

2021

Collaborators8

Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

Steffen Neumeier

Head of the High Temperature Materials Group

FAU Erlangen-Nürnberg

GERMANY

Kazunobu Kojima

Professor

Osaka University

JAPAN

Yuichi Ota

Tokyo Metropolitan Industrial Technology Research Institute

JAPAN

Takeyoshi Onuma

Professor

Kogakuin University

JAPAN

Kohei Shima

Associate professor

Tohoku University

JAPAN

Yoshihiro IROKAWA

National Institute for Materials Science

JAPAN

Akira Uedono

Professor

University of Tsukuba

JAPAN

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