Shigefusa Chichibu

Tohoku University

Japan

Research Interests

Explore related searches

Professors in Japan

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

Articles (13)

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2021

Year:

2021

Collaborators (8)

Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

View details

Steffen Neumeier

Head of the High Temperature Materials Group

FAU Erlangen-Nürnberg

GERMANY

View details

Kazunobu Kojima

Professor

Osaka University

JAPAN

View details

Yuichi Ota

Tokyo Metropolitan Industrial Technology Research Institute

JAPAN

View details

Takeyoshi Onuma

Professor

Kogakuin University

JAPAN

View details

Kohei Shima

Associate professor

Tohoku University

JAPAN

View details

Yoshihiro IROKAWA

National Institute for Materials Science

JAPAN

View details

Akira Uedono

Professor

University of Tsukuba

JAPAN

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Shigefusa Chichibu

Research Interests

Explore related searches

Contact this professor

Articles (13)

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions

High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors—A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN

Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth—A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Collaborators (8)

Shoji Ishibashi

Steffen Neumeier

Kazunobu Kojima

Yuichi Ota

Takeyoshi Onuma

Kohei Shima

Yoshihiro IROKAWA

Akira Uedono

Make your next move.