Kohei Shima

Associate professor

Tohoku University

Japan

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Kohei Shima is an Associate Professor at Tohoku University in Japan. His research focuses on semiconductor materials, particularly GaN and AlGaN, as evidenced by his recent articles on vacancy-type defects, photoluminescence measurements, and chemical vapor infiltration techniques. He has made significant contributions to the understanding of light-emitting diodes and defect characterization in these materials.

Articles (20)

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2025

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2025

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2025

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2025

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2025

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2025

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2025

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2022

Collaborators (12)

Shigefusa Chichibu

Tohoku University

JAPAN

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Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Kazunobu Kojima

Professor

Osaka University

JAPAN

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Masahiro Horita

Associate Professor

Nagoya University

JAPAN

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Yuichi Ota

Tokyo Metropolitan Industrial Technology Research Institute

JAPAN

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Makoto Miyoshi

Professor

Nagoya Institute of Technology

JAPAN

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Takeyoshi Onuma

Professor

Kogakuin University

JAPAN

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Kazuhiko Hara

Professor

Shizuoka University

JAPAN

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Yoshihiro IROKAWA

National Institute for Materials Science

JAPAN

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Akira Uedono

Professor

University of Tsukuba

JAPAN

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Yukihiro Shimogaki

JAPAN

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Yoshihiro Ishitani

Professor

Chiba University

JAPAN

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Kohei Shima

Research Interests

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Articles (20)

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Surface Reaction Kinetics of Chemical Vapor Infiltration of SiC from CH3SiCl3/H2 Revealed Using Ultradeep Microchannels

Recent progress on highly efficient and long-lifetime AlGaN-based light-emitting diodes

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

Characterization of Vacancy-Type Defects in Mg-and N-Implanted GaN by Using a Monoenergetic Positron Beam

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation

Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

Polishing and etching damages of ZnO single crystals studied using time-resolved photoluminescence spectroscopy

Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate

Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE

Kinetic study on heterogeneous nucleation and incubation period during chemical vapor deposition

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors

(Invited) Characterization of Semiconductor Crystals Based on Omnidirectional Photoluminescence (ODPL) Spectroscopy

Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals

Identifying the mechanism of formation of chlorinated silane polymer by‐products during chemical vapor infiltration of SiC from CH 3 SiCl 3 /H 2

Collaborators (12)

Shigefusa Chichibu

Shoji Ishibashi

Kazunobu Kojima

Masahiro Horita

Yuichi Ota

Makoto Miyoshi

Takeyoshi Onuma

Kazuhiko Hara

Yoshihiro IROKAWA

Akira Uedono

Yukihiro Shimogaki

Yoshihiro Ishitani

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