Anna Kafar

Institute of High Pressure Physics

Poland

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Articles (15)

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2025

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2025

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2024

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2024

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

Collaborators (13)

Mateusz Hajdel

Institute of High Pressure Physics

POLAND

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Witold Trzeciakowski

Head of laboratory, professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Muhammed AKTAŞ

Institute of High Pressure Physics

POLAND

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Iryna Levchenko

Assistant Professor

Institute of High Pressure Physics

POLAND

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Grzegorz Staszczak

Institute of High Pressure Physics

POLAND

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Marta Sawicka

Institute of High Pressure Physics

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Stanislaw Krukowski

Professor

Institute of High Pressure Physics

POLAND

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Pawel Strak

Institute of High Pressure Physics

POLAND

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Katarzyna Pieniak

Łukasiewicz Research Network - Institute of Microelectronics and Photonics

POLAND

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Robert Mroczyński

Associate Professor

University of Warsaw

POLAND

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Konrad Sakowski

Institute of High Pressure Physics

POLAND

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Piotr Perlin

professor

Institute of High Pressure Physics

POLAND

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Anna Kafar

Research Interests

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Articles (15)

Hybrid Electroluminescence Device for On‐Demand Single Photon Generation at Room Temperature

Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDs

Optimization of p-cladding layer utilizing polarization doping for Blue-Violet InGaN laser diodes

Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors

Influence of the a-directed off-cut on the opto-electrical properties of the laser diodes grown on the 0.3° misoriented m-directed GaN substrate: erratum

Influence of the a-directed off-cut on the opto-electrical properties of laser diodes grown on the 0.3° misoriented m-directed GaN substrate

Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers

Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs

Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing large substrate misorientation angle

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Collaborators (13)

Mateusz Hajdel

Witold Trzeciakowski

Muhammed AKTAŞ

Iryna Levchenko

Grzegorz Staszczak

Marta Sawicka

Pawel Kempisty

Stanislaw Krukowski

Pawel Strak

Katarzyna Pieniak

Robert Mroczyński

Konrad Sakowski

Piotr Perlin

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