Grzegorz Staszczak

Institute of High Pressure Physics

Poland

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Articles (14)

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2021

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2020

Collaborators (16)

Mateusz Hajdel

Institute of High Pressure Physics

POLAND

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Ewa Grzanka

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Anna Feduniewicz-Żmuda

Institute of High Pressure Physics

POLAND

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Witold Trzeciakowski

Head of laboratory, professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Muhammed AKTAŞ

Institute of High Pressure Physics

POLAND

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Anna Kafar

Institute of High Pressure Physics

POLAND

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Tadeusz Suski

professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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Agata Kaminska

assistant professor

Institute of High Pressure Physics

POLAND

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Katarzyna Pieniak

Łukasiewicz Research Network - Institute of Microelectronics and Photonics

POLAND

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Joanna Moneta

Institute of High Pressure Physics

POLAND

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Czeslaw Skierbiszewski

Head of MBE group/Professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Mikołaj Żak

Institute of High Pressure Physics

POLAND

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Marcin Siekacz

Assistant professor

Institute of High Pressure Physics

POLAND

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Piotr Perlin

professor

Institute of High Pressure Physics

POLAND

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Izabela Gorczyca

Institute of High Pressure Physics

POLAND

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Grzegorz Staszczak

Research Interests

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Articles (14)

Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides

Special role of indium nitride in the properties of related compounds and quantum structures

Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Precise band gap engineering using double barrier InGaN/GaN superlattices

Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing large substrate misorientation angle

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Band gap tuning in InxGa1-xN/InyGa1-yN short period superlattices

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells

Collaborators (16)

Mateusz Hajdel

Ewa Grzanka

Anna Feduniewicz-Żmuda

Witold Trzeciakowski

Muhammed AKTAŞ

Anna Kafar

Tadeusz Suski

Julita Smalc-Koziorowska

Agata Kaminska

Katarzyna Pieniak

Joanna Moneta

Czeslaw Skierbiszewski

Mikołaj Żak

Marcin Siekacz

Piotr Perlin

Izabela Gorczyca

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