Masahiro Horita

Associate Professor

Nagoya University

Japan

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Masahiro Horita is an Associate Professor at Nagoya University in Japan. His research focuses on semiconductor materials and devices, particularly in GaN and SiC structures. Recent publications include studies on vacancy-type defects in n-type GaN, free electron mobility in 4H-SiC MOSFETs, and the effects of Coulomb scattering on Hall mobilities. His work contributes significantly to the understanding of electrical properties and defect dynamics in advanced semiconductor systems.

Articles (19)

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2025

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2021

Collaborators (7)

Jun Suda

Nagoya University

JAPAN

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Assistant Professor

University of Tokyo

JAPAN

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Masahiro Horita

Research Interests

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About

Articles (19)

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(112¯0) and (11¯00) MOSFETs annealed in NO

Estimation of net acceptor activation ratio of channeled-implanted Mg from breakdown voltage analysis of vertical GaN p–n junction diodes with junction termination extension

Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers

Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack

A distinctive bound exciton line induced by electron-beam irradiation and subsequent annealing of an unintentionally doped GaN layer

Impact of Coulomb scattering due to trapped electrons on Hall mobilities in 4H-SiC(11 2 ¯ 0) and (1 1 ¯ 00) MOSFETs annealed in NO

High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations

Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations

Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN

SiO2/GaN interfaces with low defect densities and high breakdown electric fields formed by plasma-enhanced atomic layer deposition

Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

Collaborators (7)

Jun Suda

Shoji Ishibashi

Kazuyoshi Tomita

Hajime Tanaka

Kohei Shima

Akira Uedono

Takuya Maeda

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