Makoto Miyoshi

Professor

Nagoya Institute of Technology

Japan

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Articles (10)

Year:

2023

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2023

Year:

2023

Year:

2023

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2023

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2023

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Collaborators (4)

Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Kazuyuki Tadatomo

JAPAN

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Kohei Shima

Associate professor

Tohoku University

JAPAN

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Akira Uedono

Professor

University of Tsukuba

JAPAN

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Makoto Miyoshi

Research Interests

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Articles (10)

Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer

Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different hole-concentration p-base layers

DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate

DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template

Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film

High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Simulation Study on Novel GaN‐Based n−p−n Heterojunction Bipolar Transistors with a Quaternary AlGaInN Emitter and a Two‐Dimensionally Conductive Base

Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films

Collaborators (4)

Shoji Ishibashi

Kazuyuki Tadatomo

Kohei Shima

Akira Uedono

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