Shoji Ishibashi

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

Research Interests

Explore related searches

Professors in Japan

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

Articles (20)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Collaborators (14)

Koji Michishio

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

View details

Shigefusa Chichibu

Tohoku University

JAPAN

View details

Andrés Felipe Santander-Syro

Université Paris-Saclay

FRANCE

View details

Minoru Otani

Professor

University of Tsukuba

JAPAN

View details

Kohei Yoshimatsu

Associate professor

Tokyo Institute of Technology

JAPAN

View details

Masahiro Horita

Associate Professor

Nagoya University

JAPAN

View details

Makoto Miyoshi

Professor

Nagoya Institute of Technology

JAPAN

View details

Daisuke SHIGA

Assistant Professor

Tohoku University

JAPAN

View details

Sachio Horiuchi

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

View details

Ryu Yukawa

Associate Professor

Tohoku University

JAPAN

View details

Satoshi Hagiwara

Assistant Professor

University of Tsukuba

JAPAN

View details

Kohei Shima

Associate professor

Tohoku University

JAPAN

View details

Akira Uedono

Professor

University of Tsukuba

JAPAN

View details

Michal Bockowski

Professor

Institute of High Pressure Physics

POLAND

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Shoji Ishibashi

Research Interests

Explore related searches

Contact this professor

Articles (20)

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

Characterization of Vacancy-Type Defects in Mg-and N-Implanted GaN by Using a Monoenergetic Positron Beam

Field-Effect Crystal Engineering in Proton–π-Electron Correlated Systems

Vacancy-Type Defects in n-Type GaN Fabricated by Low-Dose Ion Implantation Studied by a Monoenergetic Positron Beam

Field-Effect Crystal Engineering in Proton–π-Electron Correlated Systems

Vacancy-Type Defects in HfO<sub>2</sub> Layers and Their Role in Amorphous-to-Crystalline Transition Studied by Monoenergetic Positron Beams

Unveiling High Electro‐Optic Performance in a Proton–π‐Electron‐Coupled Ferroelectric Crystal

Bias-dependent surface stress by density functional theory combined with the effective screening medium method

Unveiling High Electro-Optic Performance in a Proton-π-Electron-Coupled Ferroelectric Crystal

Competition of polar and antipolar states hidden behind a variety of polarization switching modes in hydrogen-bonded molecular chains

Erratum: Computational findings of metastable ferroelectric phases of squaric acid [Phys. Rev. B 97, 184102 (2018)]

A straightforward method using the sign of the piezoelectric coefficient to identify the ferroelectric switching mechanism

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Effect of solid-solution strengthening on deformation mechanisms and strain hardening in medium-entropy V1-Cr CoNi alloys

Effect of solid-solution strengthening on deformation mechanisms and strain hardening in medium-entropy V1-xCrxCoNi alloys

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

Collaborators (14)

Koji Michishio

Shigefusa Chichibu

Andrés Felipe Santander-Syro

Minoru Otani

Kohei Yoshimatsu

Masahiro Horita

Makoto Miyoshi

Daisuke SHIGA

Sachio Horiuchi

Ryu Yukawa

Satoshi Hagiwara

Kohei Shima

Akira Uedono

Michal Bockowski

Make your next move.