Malgorzata Sznajder

Rzeszów University

Poland

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Articles (7)

Year:

2025

Year:

2024

Year:

2024

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Collaborators (3)

Ewa Grzanka

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Roman Hrytsak

Assistant Professor

Institute of High Pressure Physics

POLAND

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Malgorzata Sznajder

Research Interests

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Articles (7)

Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects

Solidified Salt Melts of the NaCl–KCl–CeF3–EuF3 System as Promising Luminescent Materials

Equimolar As4S4/Fe3O4 Nanocomposites Fabricated by Dry and Wet Mechanochemistry: Some Insights on the Magnetic–Fluorescent Functionalization of an Old Drug

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Collaborators (3)

Ewa Grzanka

Pawel Kempisty

Roman Hrytsak

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Malgorzata Sznajder

Research Interests

Explore related searches

Contact this professor

Articles (7)

Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects

Solidified Salt Melts of the NaCl–KCl–CeF3–EuF3 System as Promising Luminescent Materials

Equimolar As4S4/Fe3O4 Nanocomposites Fabricated by Dry and Wet Mechanochemistry: Some Insights on the Magnetic–Fluorescent Functionalization of an Old Drug

Modeling of the Point Defect Migration across the AlN/GaN Interfaces&mdash;Ab Initio Study

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Collaborators (3)

Ewa Grzanka

Pawel Kempisty

Roman Hrytsak

Make your next move.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study