Ewa Grzanka

Institute of High Pressure Physics, Polish Academy of Sciences

Poland

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Articles (12)

Year:

2025

Year:

2023

Year:

2022

Year:

2022

Year:

2022

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2021

Year:

2021

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2021

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Collaborators (17)

Robert Czernecki

Institute of High Pressure Physics

POLAND

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Magdalena Baran

Sieć Badawcza Łukasiewicz Instytut Mikroelektroniki i Fotoniki

POLAND

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Witold Trzeciakowski

Head of laboratory, professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Grzegorz Staszczak

Institute of High Pressure Physics

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Tadeusz Suski

professor

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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STRACHOWSKI Tomasz

Head of Laboratory

Institute of Electronic Materials Technology

POLAND

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Marcin Sarzynski

assistant professor

Institute of High Pressure Physics

POLAND

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Katarzyna Pieniak

Łukasiewicz Research Network - Institute of Microelectronics and Photonics

POLAND

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Artur Lachowski

Institute of High Pressure Physics

POLAND

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Roman Hrytsak

Assistant Professor

Institute of High Pressure Physics

POLAND

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Mirosław Przybysz

Military University of Technology in Warsaw

POLAND

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Robert Kosturek

Assistant Professor

Military University of Technology

POLAND

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Malgorzata Sznajder

Rzeszów University

POLAND

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Ewa Raj

Associate professor

Lodz University of Technology

POLAND

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Izabela Gorczyca

Institute of High Pressure Physics

POLAND

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Ewa Grzanka

Research Interests

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Articles (12)

In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Hydrothermal Synthesis of Zinc Oxide Nanoparticles Using Different Chemical Reaction Stimulation Methods and Their Influence on Process Kinetics

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

Microwave-Assisted Hydrothermal Synthesis of Zinc-Aluminum Spinel ZnAl2O4

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

Collaborators (17)

Robert Czernecki

Magdalena Baran

Witold Trzeciakowski

Grzegorz Staszczak

Pawel Kempisty

Tadeusz Suski

Julita Smalc-Koziorowska

STRACHOWSKI Tomasz

Marcin Sarzynski

Katarzyna Pieniak

Artur Lachowski

Roman Hrytsak

Mirosław Przybysz

Robert Kosturek

Malgorzata Sznajder

Ewa Raj

Izabela Gorczyca

Make your next move.

Ewa Grzanka

Research Interests

Explore related searches

Contact this professor

Articles (12)

In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Hydrothermal Synthesis of Zinc Oxide Nanoparticles Using Different Chemical Reaction Stimulation Methods and Their Influence on Process Kinetics

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

Modeling of the Point Defect Migration across the AlN/GaN Interfaces&mdash;Ab Initio Study

Microwave-Assisted Hydrothermal Synthesis of Zinc-Aluminum Spinel ZnAl2O4

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

Collaborators (17)

Robert Czernecki

Magdalena Baran

Witold Trzeciakowski

Grzegorz Staszczak

Pawel Kempisty

Tadeusz Suski

Julita Smalc-Koziorowska

STRACHOWSKI Tomasz

Marcin Sarzynski

Katarzyna Pieniak

Artur Lachowski

Roman Hrytsak

Mirosław Przybysz

Robert Kosturek

Malgorzata Sznajder

Ewa Raj

Izabela Gorczyca

Make your next move.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study