Roman Hrytsak

Assistant Professor

Institute of High Pressure Physics

Poland

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Roman Hrytsak is an Assistant Professor at the Institute of High Pressure Physics in Poland. His research primarily focuses on the behavior of point defects in semiconductor materials, particularly in relation to InGaN/GaN quantum wells and gallium nitride systems. Recent articles authored by Professor Hrytsak explore various mechanisms of defect migration, thermal stability, and the effects of material composition and temperature on semiconductor performance.

Articles (9)

Year:

2025

Year:

2025

Year:

2022

Year:

2022

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2021

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2021

Year:

2021

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2021

Year:

2021

Collaborators (7)

Robert Czernecki

Institute of High Pressure Physics

POLAND

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Ewa Grzanka

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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František Hájek

Czech Technical University in Prague

CZECH REPUBLIC

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Artur Lachowski

Institute of High Pressure Physics

POLAND

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Malgorzata Sznajder

Rzeszów University

POLAND

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Roman Hrytsak

Research Interests

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About

Articles (9)

Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects

Clusters of vacancies in gallium nitride grown by MOCVD

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers

Collaborators (7)

Robert Czernecki

Ewa Grzanka

Pawel Kempisty

Julita Smalc-Koziorowska

František Hájek

Artur Lachowski

Malgorzata Sznajder

Make your next move.

Roman Hrytsak

Research Interests

Explore related searches

Contact this professor

About

Articles (9)

Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects

Clusters of vacancies in gallium nitride grown by MOCVD

Modeling of the Point Defect Migration across the AlN/GaN Interfaces&mdash;Ab Initio Study

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces

Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers

Collaborators (7)

Robert Czernecki

Ewa Grzanka

Pawel Kempisty

Julita Smalc-Koziorowska

František Hájek

Artur Lachowski

Malgorzata Sznajder

Make your next move.

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study