Doctoral Researcher – Heterogeneous Integration for Power Electronics Aalto University in Finland

The University of Arkansas is seeking a postdoctoral research scientist to work on advanced power electronics packaging for next-generation power conversion systems. The project focuses on advanced power semiconductor modules and packaging technologies for wide-bandgap and ultra-wide-bandgap devices, with voltage ratings from 650 V to over 10 kV. The successful researcher will contribute to externally funded work supporting electric transportation, renewable energy, solid-state transformers, ene...

The Department of Physics at the University of Jyväskylä’s Accelerator Laboratory is recruiting a postdoctoral researcher to work on radiation effects in power electronics. The project focuses on wide-bandgap semiconductor technologies, especially silicon carbide (SiC) and gallium nitride (GaN) power devices, with the aim of developing practical radiation testing guidelines for these emerging components. The successful researcher will review published studies on radiation effects, failure mechan...

Postdoctoral Opportunities at the University of Michigan Roozbeh Tabrizian, Associate Professor in Electrical and Computer Engineering at the University of Michigan, Ann Arbor, is recruiting two postdoctoral researchers to join his laboratory. The research focuses on next-generation MEMS technologies, with emphasis on MEMS resonators , acoustic devices , device physics , micro/nanofabrication , functional materials , RF/microwave characterization , precision measurement , oscillators , frequency...

This research opportunity is hosted by the U.S. Army Research Laboratory’s Sensors and Electron Devices Directorate (SEDD) in Adelphi, Maryland. The project sits at the intersection of silicon carbide materials science, quantum device concepts, optoelectronics, and power-device integration , with a clear emphasis on enabling next-generation functional devices based on wide-bandgap semiconductors. The advertised research directions focus on three closely related themes. First, the selected resear...

The High Power Density Electronics (HPDE) Center at The University of Texas at Dallas is seeking a postdoctoral research associate to investigate the characterization and modeling of gallium nitride (GaN) power devices. The project focuses on evaluating high-voltage GaN and emerging ultra-wide-bandgap power devices in collaboration with industry partners. The researcher will develop models that predict device performance, lifetime, and reliability, contributing to advanced power-electronics tech...