Agata Kaminska

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assistant professor

Institute of High Pressure Physics

Poland

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About

Agata Kaminska is an assistant professor at the Institute of High Pressure Physics in Poland. Her research primarily focuses on the properties of semiconductor materials, including ab initio studies of bonding in nitrides, strain distribution in superlattices, and the effects of hydrostatic pressure on semiconductor characteristics. Recent publications highlight her work on the optical properties of GaN/AlN systems and point defects in hexagonal boron nitride.

Recent Grants

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Comparative study of the optical properties of polar and non-polar III-nitride nanostructures

Open Date: 2017-02-01

Close Date: 2018-12-01

Grant: Close

The effect of distribution of internal electric fields on the optical properties of low dimensional structures of nitride semiconductors - crystal growth, experiment and theoretical modelling

Open Date: 2013-02-01

Close Date: 2016-08-01

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The pressure study of radiative recombination processes in selected structures of nitride semiconductors and in dielectrics doped with rare-earth ions

Open Date: 2010-04-01

Close Date: 2012-04-01

Grant: Close

Studies of the influence of crystalline environment on the probabilities of intra-configurational transitions of selected rare earth dopants in bulk crystals and nanocrystalline materials

Open Date: 2008-05-01

Close Date: 2010-11-01

Grant: Close

The study of defect structure of LiNbO3:Cr,MgO crystals

Open Date: 2003-03-01

Close Date: 2005-03-01

Articles (17)

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2025

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2024

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2022

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2021

Collaborators (20)

Emilia Choińska

University of Warsaw

POLAND

Agata Kaminska

Research Interests

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About

Recent Grants

Articles (17)

Ab Initio Elucidation of the Nature of the Bonding of Tetrahedral Nitrides (BN, AlN, GaN, and InN), Hexagonal BN, and Graphene

Spontaneous and Piezo Polarization Versus Polar Surfaces: Fundamentals and Ab Initio Calculations

Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies

Isotope Substitution and Polytype Control for Point Defects Identification: The Case of the Ultraviolet Color Center in Hexagonal Boron Nitride

Coulomb Contribution to Shockley–Read–Hall Recombination

Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides

On method of estimating recombination rates by analysis of time-resolved luminescence

Polarization Doping in a GaN-InN System—Ab Initio Simulation

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

Optical and structural properties of europium doped Y–Al–O compounds grown by microwave driven hydrothermal technique

Polarization doping-Ab initio verification of the concept: Charge conservation and nonlocality

Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell

Corrigendum to “Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures” [J. Alloy. Compd. 823 (2020) 153791]

Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study

Electron Paramagnetic Resonance and Optical Studies of Thermoluminescence Processes in Mn-Doped YAlO3 Single Crystals

Electron Paramagnetic Resonance and Optical Studies of Thermoluminescence Processes in Mn-Doped YAIO(3) Single Crystals

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

Collaborators (20)

Emilia Choińska

Yoshihiro Kangawa

Eva Monroy

Grzegorz Staszczak

Pawel Kempisty

Zbigniew Zytkiewicz

Agnieszka Wołoś

Abinash Adhikari

Roman Minikayev

Yaroslav Zhydachevskyy

Stanislaw Krukowski

Pawel Strak

Tomasz Sochacki

Krzysztof Korona

Grzegorz Muziol

Konrad Sakowski

Anna Reszka

Aleksandra Wierzbicka

Piotr Perlin

Izabela Gorczyca

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