Tomasz Sochacki

Institute of High Pressure Physics

Poland

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Articles (20)

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2025

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2025

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2025

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2023

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2022

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2022

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2022

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2022

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2021

Collaborators (15)

Robert Czernecki

Institute of High Pressure Physics

POLAND

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Jan Suffczynski

University of Warsaw

POLAND

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Anna Feduniewicz-Żmuda

Institute of High Pressure Physics

POLAND

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Marta Sawicka

Institute of High Pressure Physics

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Igor Prozheev

University of Helsinki

FINLAND

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Julita Smalc-Koziorowska

assistant professor

Institute of High Pressure Physics

POLAND

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Pawel Strak

Institute of High Pressure Physics

POLAND

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Henryk Turski

Professor

Institute of High Pressure Physics

POLAND

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Agata Kaminska

assistant professor

Institute of High Pressure Physics

POLAND

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Mikolaj Amilusik

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Marcin Turek

Maria Curie-Skłodowska University

POLAND

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Patrik Straňák

Fraunhofer Institute for Applied Solid State Physics

GERMANY

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Filip Tuomisto

University of Helsinki

FINLAND

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Michal Bockowski

Professor

Institute of High Pressure Physics

POLAND

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Tomasz Sochacki

Research Interests

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Articles (20)

Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications

Detailed study of HVPE-GaN doped with silicon

Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride

On Morphology of Aluminum–Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants’ Pressure and Ammonia Flow Rate

On method of estimating recombination rates by analysis of time-resolved luminescence

On method of estimating recombination rates by analysis of time-resolved luminescence

Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride

Origins of Electrical Compensation in Si‐Doped HVPE GaN

Origins of Electrical Compensation in Si‐Doped HVPE GaN

Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

Kelvin Probe Force Microscopy under Variable Illumination: A Novel Technique To Unveil Charge Carrier Dynamics in GaN

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals

Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

Collaborators (15)

Robert Czernecki

Jan Suffczynski

Anna Feduniewicz-Żmuda

Marta Sawicka

Pawel Kempisty

Igor Prozheev

Julita Smalc-Koziorowska

Pawel Strak

Henryk Turski

Agata Kaminska

Mikolaj Amilusik

Marcin Turek

Patrik Straňák

Filip Tuomisto

Michal Bockowski

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